公开(公告)号：JP2007027749A

公开(公告)日：2007-02-01

申请号：JP2006194041

申请日：2006-07-14

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： DUPONT AUDREY ,  SCHUPKE KRISTIN ,  JAKSCHIK STEFAN ,  AVELLAN ALEJANDRO

IPC: H01L21/308 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L21/31111 ,  C09K13/08

Abstract: PROBLEM TO BE SOLVED: To provide a solution suitable for wet treatment of high dielectric-constant materials containing hafnium.
SOLUTION: A solution for wet treatment of a hafnium-containing layer such as HfO2, HfO2/Al2O3, HfO2/SiO2, HfSiOx or HfAlOx, etc. is characterized by containing hydrofluoric acid and at least one substance that is an organic substance with low ionic strength and selected from a group comprising ethylene glycol, polyglycol, and acetate glycol.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供适用于湿法处理含有铪的高介电常数材料的溶液。 解决方案：用于湿法处理HfO 2，HfO 2 / Al 2 O 3，HfO 2 / SiO 2，HfSiO x或HfAlO x等含铪层的溶液的特征在于含有氢氟酸和至少一种有机物质 具有低离子强度并且选自包括乙二醇，聚乙二醇和乙酸酯二醇的组。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：DE102005022840B3

公开(公告)日：2006-09-28

申请号：DE102005022840

申请日：2005-05-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOLDBACH MATTHIAS ,  FITZ CLEMENS ,  DUPONT AUDREY

IPC: H01L21/283 ,  H01L21/8242

Abstract: The method involves forming an isolation layer (1) on the top surface of a semiconductor substrate, and then forming contact openings (2) by stripping the cell field area of the isolation layer. Dopants, which can be activated at high temperature, are implanted into the semiconductor substrate within the range of the contact openings. The dopants are activated for annealing the crystal defects on the semiconductor substrate. A metallic layer and coating layers are then formed on the semiconductor substrate. The contact openings are then annealed and filled with conductive material.

公开(公告)号：DE102006004396B3

公开(公告)日：2007-03-08

申请号：DE102006004396

申请日：2006-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DUPONT AUDREY ,  GOLDBACH MATTHIAS ,  FITZ CLEMENS

IPC: H01L21/321 ,  H01L21/336

Abstract: Sections of the deposition layer (5) are removed by a process liquid comprising high-concentration ozonized sulfuric acid (SOM-solution). An independent claim is included for a method of forming a metal silicide on the surface of a substrate. The method involves providing a substrate (1) with a semiconductor structure made of silicon. A deposition layer (5) made of a low-density refractory metal is deposited on the surface of the substrate. The substrate is thermally treated, forming metal silicide at the boundary between the semiconductor structure and the deposition layer. the non-siliconized sections of the deposition layer are removed using an SOM solution.