公开(公告)号：DE102005022840B3

公开(公告)日：2006-09-28

申请号：DE102005022840

申请日：2005-05-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOLDBACH MATTHIAS ,  FITZ CLEMENS ,  DUPONT AUDREY

IPC: H01L21/283 ,  H01L21/8242

Abstract: The method involves forming an isolation layer (1) on the top surface of a semiconductor substrate, and then forming contact openings (2) by stripping the cell field area of the isolation layer. Dopants, which can be activated at high temperature, are implanted into the semiconductor substrate within the range of the contact openings. The dopants are activated for annealing the crystal defects on the semiconductor substrate. A metallic layer and coating layers are then formed on the semiconductor substrate. The contact openings are then annealed and filled with conductive material.

公开(公告)号：DE102006004396B3

公开(公告)日：2007-03-08

申请号：DE102006004396

申请日：2006-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DUPONT AUDREY ,  GOLDBACH MATTHIAS ,  FITZ CLEMENS

IPC: H01L21/321 ,  H01L21/336

Abstract: Sections of the deposition layer (5) are removed by a process liquid comprising high-concentration ozonized sulfuric acid (SOM-solution). An independent claim is included for a method of forming a metal silicide on the surface of a substrate. The method involves providing a substrate (1) with a semiconductor structure made of silicon. A deposition layer (5) made of a low-density refractory metal is deposited on the surface of the substrate. The substrate is thermally treated, forming metal silicide at the boundary between the semiconductor structure and the deposition layer. the non-siliconized sections of the deposition layer are removed using an SOM solution.

公开(公告)号：DE102004047767B3

公开(公告)日：2006-08-10

申请号：DE102004047767

申请日：2004-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FITZ CLEMENS ,  HAHN JENS ,  SCHMIDBAUER SVEN

IPC: H01L21/3205 ,  C23C14/58 ,  H01L21/324 ,  H01L21/68

Abstract: A method for siliconizing a silicon boundary surface, involves preheating wafer chucks a deposition chamber (43) of a physical vapor deposition (PVD) installation of at least 1 RTP 1-temperature of 300 deg.C, positioning the semiconductor wafer (5) on the wafer chuck, in which the semiconductor wafer is initially thermally decoupled from the heated wafer chuck, and then precipitating a metal, and followed by a thermal coupling of the semiconductor wafer to the heated wafer chuck, such that the semiconductor wafer (5) is thermally treated at the RT1-temperature in situ, within the deposition chamber (43a).

公开(公告)号：DE10344562A1

公开(公告)日：2004-11-11

申请号：DE10344562

申请日：2003-09-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OFFENBERG DIRK ,  KLEINT CHRISTOPH ,  FITZ CLEMENS

IPC: H01L21/283 ,  H01L21/285

Abstract: Forming contacts on silicon during the production of semiconductor memory devices comprises providing a silicon layer (1), forming a titanium liner layer (50) on the silicon layer, forming a cobalt layer (3) on the liner layer, and heat treating so that cobalt from the cobalt layer diffuses through the liner layer to the silicon layer and an epitaxial CoSi layer (2) is formed on the surface of the silicon layer.