公开(公告)号：DE19940758A1

公开(公告)日：2001-03-15

申请号：DE19940758

申请日：1999-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： CAPPELLANI ANNALISA ,  LUSTIG BERNHARD ,  EIBEL NORBERT ,  SCHUMANN DIRK

IPC: H01L21/28 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L23/485 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

Abstract: The invention relates to a method for producing an HF-FET. According to said method, doped source and drain regions (7, 8) are created in a substrate (1). A gate-insulation layer (4) is applied via a channel region. A spacer structure (6) is created above the substrate (1) which separates the channel region from the source and drain regions. A continuous metal layer (10) is deposited using this structure and the thickness of the metal layer is reduced to such an extent that electrically separate self-aligned metal structures (10.2, 10.3, 10.1) are formed above the source, drain and channel regions.