公开(公告)号：WO2005038930A2

公开(公告)日：2005-04-28

申请号：PCT/EP2004052333

申请日：2004-09-28

Applicant: INFINEON TECHNOLOGIES AG ,  TEWS HELMUT ,  FEHLHABER RODGER

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  B81C1/00

CPC classification number: H01L29/7851 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/66795

Abstract: Disclosed is a structuring method, among other things. According to said method, a filling material (22) having a T-shaped cross section is used as a structuring mask in order to create structures with sublithographic dimensions, particularly a double-fin field effect transistor.

Abstract translation: 其中特别说明了一种图案化方法，其中使用T形横截面的填充材料（22）作为构图掩模以产生具有亚光刻尺寸的结构，特别是双鳍场效应晶体管。

公开(公告)号：WO2004057660A2

公开(公告)日：2004-07-08

申请号：PCT/DE0304046

申请日：2003-12-09

Applicant: INFINEON TECHNOLOGIES AG ,  TEWS HELMUT ,  FEHLHABER RODGER

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/28 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/336

CPC classification number: H01L21/2815 ,  H01L21/28114 ,  H01L21/823425 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/84

Abstract: The invention relates to a method for producing: a sublithographic gate structure; an associated field effect transistor; an associated inverter, and; an associated inverter structure. A sublithographic gate structure (SG) having slight variations in the critical dimensions thereof can be directly produced on the lateral walls of a lithographically structured mask (M0, 2) by the conformal formation of a gate insulation layer (3) and of a gate layer with subsequently executed anisotropic etching.

Abstract translation: 本发明涉及一种用于制造亚光刻栅极结构，相关联的场效应晶体管和相关联的逆变器以及相关联的逆变器结构的，具有光刻图案化掩模的侧壁（M0，2）保形形成栅极绝缘层（3）和栅极层 已执行以下各向异性蚀刻（SG）可以在直接的临界尺寸亚光刻栅极结构的小变化来制造。

公开(公告)号：DE10217875B4

公开(公告)日：2004-04-29

申请号：DE10217875

申请日：2002-04-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/033 ,  H01L21/3213 ,  G03F1/00

公开(公告)号：DE10345455A1

公开(公告)日：2005-05-04

申请号：DE10345455

申请日：2003-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/033 ,  H01L21/308 ,  G03F7/00

Abstract: An interconnect connection structure having first and second interconnects and multiple connection elements that electrically connect the first interconnect to the second interconnect is described. The multiple connection elements are formed laterally in a lateral region of the first and second interconnects relative to an overlay orientation of the interconnects. A central region may be free of connection elements so that electro-migration properties of the connection structure are improved and the current-carrying capacity is increased.

公开(公告)号：AU2003289828A8

公开(公告)日：2004-07-14

申请号：AU2003289828

申请日：2003-12-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/28 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78

公开(公告)号：DE10348007B4

公开(公告)日：2008-04-17

申请号：DE10348007

申请日：2003-10-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/336 ,  H01L21/033 ,  H01L21/308 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

公开(公告)号：DE10230696B4

公开(公告)日：2005-09-22

申请号：DE10230696

申请日：2002-07-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L29/423 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

Abstract: A method for fabricating a short channel field-effect transistor is presented. A sublithographic gate sacrificial layer is formed, as are spacers at the side walls of the gate sacrificial layer. The gate sacrificial layer is removed to form a gate recess and a gate dielectric and a control layer are formed in the gate recess. The result is a short channel field-effect transistor with minimal fluctuations in the critical dimensions in a range below 100 nanometers.

公开(公告)号：DE10348007A1

公开(公告)日：2005-05-25

申请号：DE10348007

申请日：2003-10-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78

公开(公告)号：DE10260234A1

公开(公告)日：2004-07-15

申请号：DE10260234

申请日：2002-12-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/28 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/336

公开(公告)号：AU2003289828A1

公开(公告)日：2004-07-14

申请号：AU2003289828

申请日：2003-12-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/28 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/336