公开(公告)号：WO03069629A2

公开(公告)日：2003-08-21

申请号：PCT/DE0300224

申请日：2003-01-28

Applicant: INFINEON TECHNOLOGIES AG ,  GAMPERL SUSANNE ,  TSCHETERNIGG SIEGFRIED ,  WEDEL ARMIN

Inventor： GAMPERL SUSANNE ,  TSCHETERNIGG SIEGFRIED ,  WEDEL ARMIN

IPC: G11C16/22

CPC classification number: G11C16/22

Abstract: The column lines of the memory matrix are alternatively used as detector lines. The selected detector lines are, together with the relevant column line, respectively impinged upon with a precharge voltage prior to the read-out of the memory columns. If a detector line loses its precharge level during the read-out of the memory cells, an incidence of light runs out and a corresponding alarm function is triggered. Preferably, adjacent column lines are connected to the respectively selected column lines for data transmission as detector lines.

Abstract translation: 所述存储器阵列的列线替换地被用作检测器线。 所选择的检测器线当在之前的存储器列的读出每种情况下起作用，与相应的列线的预充电电压到一起。 当检测器线的存储器单元的读取过程中失去其预充电电平，假定光并触发相应的警报功能。 优选地，相邻的列线被连接作为检测器行到所选择的每个数据传输列线。

公开(公告)号：DE10206186B4

公开(公告)日：2010-01-28

申请号：DE10206186

申请日：2002-02-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GAMPERL SUSANNE ,  WEDEL ARMIN ,  TSCHETERNIGG SIEGFRIED

IPC: G11C16/22 ,  G06K19/073

Abstract: EEPROM memory matrix in which column lines are alternatively used as detector lines. A precharge voltage is applied to selected detector lines together with the relevant column line in each case before read-out of the memory columns. If a detector line loses its precharge level during the read-out of the memory cells, light incidence is assumed and a corresponding alarm function is triggered. Preferably column lines adjacent to the column lines that are respectively selected for the data transmission are connected as detector lines.

公开(公告)号：DE50301613D1

公开(公告)日：2005-12-15

申请号：DE50301613

申请日：2003-01-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GAMPERL SUSANNE ,  TSCHETERNIGG SIEGFRIED ,  WEDEL ARMIN

IPC: G11C16/22

Abstract: EEPROM memory matrix in which column lines are alternatively used as detector lines. A precharge voltage is applied to selected detector lines together with the relevant column line in each case before read-out of the memory columns. If a detector line loses its precharge level during the read-out of the memory cells, light incidence is assumed and a corresponding alarm function is triggered. Preferably column lines adjacent to the column lines that are respectively selected for the data transmission are connected as detector lines.

公开(公告)号：DE10206186A1

公开(公告)日：2003-09-04

申请号：DE10206186

申请日：2002-02-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GAMPERL SUSANNE ,  WEDEL ARMIN ,  TSCHETERNIGG SIEGFRIED

IPC: G11C16/22

Abstract: EEPROM memory matrix in which column lines are alternatively used as detector lines. A precharge voltage is applied to selected detector lines together with the relevant column line in each case before read-out of the memory columns. If a detector line loses its precharge level during the read-out of the memory cells, light incidence is assumed and a corresponding alarm function is triggered. Preferably column lines adjacent to the column lines that are respectively selected for the data transmission are connected as detector lines.