公开(公告)号：DE19937994C2

公开(公告)日：2003-12-11

申请号：DE19937994

申请日：1999-08-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRASE GABRIELA ,  GRANDEMY GREGOIRE

IPC: H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/283

Abstract: The novel etching process for a two-layer metallization, or dual damascene patterning, is simple and cost-effective to carry out and reliably prevents fences from forming during the etching process in the region of the polymer intermediate layer. The etching of the oxide layer and of the polymer intermediate layer for the dual damascene patterning is effected by a CF4 ARC open process with high selectivity with respect to the photoresist with a lengthened etching time.

公开(公告)号：DE19937994A1

公开(公告)日：2001-02-22

申请号：DE19937994

申请日：1999-08-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRASE GABRIELA ,  GRANDEMY GREGOIRE

IPC: H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/283

Abstract: The invention relates to an etching process for dual-layer metallisation, or dual damascene structuring, which is simple and economical and which reliably prevents fences from forming in the area of the polymer intermediate layer during the etching process. To this end, the invention provides that the oxide layer and the polymer intermediate layer are etched for the dual damascene structuring using a CF4 ARC open process, with a high degree of selectivity in relation to the photoresist and with a longer etching time.