公开(公告)号：WO2004100259A3

公开(公告)日：2005-03-31

申请号：PCT/EP2004003376

申请日：2004-03-31

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG ,  MAUDER ANTON ,  GUTSMANN BERND

Inventor： MAUDER ANTON ,  GUTSMANN BERND

IPC: H01L21/60 ,  H01L23/373 ,  H01L25/065 ,  H01L23/538 ,  H01L25/07

CPC classification number: H01L25/0655 ,  H01L23/3735 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/2402 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/30107 ,  H01L2924/00

Abstract: The invention relates to a semi-conductor component and to a method for the production thereof. The semi-conductor component comprises a substrate (3) whereon one or several semi-conductor chips (1, 2) are arranged and contacted. A structured conductor layer is applied to an insulating masking element (8) comprising through-openings (12) extending to connection points (19) on the substrate and/or semi-conductor chip (1). The conductor layer comprises integral projections extending through the through-openings (12) to the connection points (19).

Abstract translation: 半导体器件及其制造这种半导体器件的方法。 该半导体器件包括一衬底（3）被布置在所述一个或多个半导体芯片（1,2）和接触。 上的绝缘掩模（8），所述通道开口（12）到所述衬底和/或在半导体芯片上的连接点（19）（1），图案化的导体层被施加，其延伸穿过所述通孔在所述连接点（12）（19 有）延伸的一体的凸起。

公开(公告)号：DE10159851B4

公开(公告)日：2006-05-24

申请号：DE10159851

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG ,  SEMIKRON ELEKTRONIK GMBH

Inventor： SILBER DIETER ,  GUTSMANN BERND ,  MOURICK PAUL ,  MILLER GERHARD

IPC: H01L23/48 ,  H01L25/07 ,  H01L23/58 ,  H01L23/66 ,  H02M7/00

Abstract: The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.

公开(公告)号：DE10333315B4

公开(公告)日：2007-09-27

申请号：DE10333315

申请日：2003-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTSMANN BERND ,  PASSE THOMAS

IPC: H01L25/07 ,  H01L23/538 ,  H01L29/739

Abstract: The module has a planar connection section (18) formed from a substrate section (1b) on which strip-shaped conductive tracks (7b) are provided for direct electrical connection of the module to an external connection. At least one substrate section (1a,1b) has a low resistance and/or low inductance so that current-carrying tracks (6,7) with opposite current directions are arranged near to each other and lie opposite each other over a large area.

公开(公告)号：DE10159851A1

公开(公告)日：2003-06-26

申请号：DE10159851

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG ,  SEMIKRON ELEKTRONIK GMBH

Inventor： SILBER DIETER ,  GUTSMANN BERND ,  MOURICK PAUL ,  MILLER GERHARD

IPC: H01L23/48 ,  H01L23/66 ,  H01L25/07 ,  H02M7/00 ,  H01L23/58

Abstract: The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.

公开(公告)号：DE10314172B4

公开(公告)日：2006-11-30

申请号：DE10314172

申请日：2003-03-28

Applicant: INFINEON TECHNOLOGIES AG ,  SIEMENS AG

Inventor： AUERBACH FRANZ ,  GUTSMANN BERND ,  LICHT THOMAS ,  SELIGER NORBERT ,  WEIDNER KARL ,  ZAPF JOERG

IPC: H01L23/485 ,  H01L21/60 ,  H01L23/12 ,  H01L23/498 ,  H01L23/538 ,  H01L23/552 ,  H01L23/66

Abstract: In an arrangement having at least one substrate, at least one electrical component is disposed on a surface section of the substrate and is provided with an electrical contact area, and at least one electrical contact lug has an electrical connecting area electrically contacting the contact area of the component. The connecting area of the contact lug and the contact area of the component are interconnected so that at least one zone of the contact lug protrudes beyond the area of the component. The contact lug is provided with at least one electrically conducting film while the electrically conducting film is provided with the electrical connecting area of the contact lug. The arrangement is particularly useful for large-area, low-inductive contacting of power semiconductor chips, as it allows for high current density.

公开(公告)号：DE10320877A1

公开(公告)日：2004-12-09

申请号：DE10320877

申请日：2003-05-09

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  GUTSMANN BERND

IPC: H01L21/60 ,  H01L23/373 ,  H01L25/065 ,  H01L23/04 ,  H01L23/48 ,  H01L21/50

Abstract: The invention relates to a semi-conductor component and to a method for the production thereof. The semi-conductor component comprises a substrate (3) whereon one or several semi-conductor chips (1, 2) are arranged and contacted. A structured conductor layer is applied to an insulating masking element (8) comprising through-openings (12) extending to connection points (19) on the substrate and/or semi-conductor chip (1). The conductor layer comprises integral projections extending through the through-openings (12) to the connection points (19).