公开(公告)号：DE502004011747D1

公开(公告)日：2010-11-18

申请号：DE502004011747

申请日：2004-05-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PASSE THOMAS ,  FERBER GOTTFRIED ,  SPECHT BENEDIKT

IPC: H01L21/48 ,  H01L23/498 ,  H01L25/16 ,  H05K1/03 ,  H05K1/11 ,  H05K3/40

公开(公告)号：DE10333315B4

公开(公告)日：2007-09-27

申请号：DE10333315

申请日：2003-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTSMANN BERND ,  PASSE THOMAS

IPC: H01L25/07 ,  H01L23/538 ,  H01L29/739

Abstract: The module has a planar connection section (18) formed from a substrate section (1b) on which strip-shaped conductive tracks (7b) are provided for direct electrical connection of the module to an external connection. At least one substrate section (1a,1b) has a low resistance and/or low inductance so that current-carrying tracks (6,7) with opposite current directions are arranged near to each other and lie opposite each other over a large area.

公开(公告)号：DE102004027185B4

公开(公告)日：2008-08-28

申请号：DE102004027185

申请日：2004-06-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHILLING OLIVER ,  PASSE THOMAS

IPC: H01L25/07 ,  H01L23/48 ,  H01L23/64 ,  H01L27/02

Abstract: A semiconductor device has first, second, and third connecting leads ( 1, 2, 3 ), whose respective base points ( 1 f, 2 f, 3 f) have centroids ( 1 m, 2 m, 3 m). The connecting leads are arranged wherein an angle (alpha) between a first line drawn between the centroids ( 1 m, 3 m) of the base points ( 1 f, 3 f) of first lead ( 1 ) and third lead ( 3 ) and a second line drawn between the centroids ( 2 m, 3 m) of the base points ( 2 f, 3 f) of second lead ( 2 ) and third lead ( 3 ) is 20° maximum. In addition, a semiconductor module may incorporate two or more semiconductor devices which are connected electrically in parallel.

公开(公告)号：DE102004026159B3

公开(公告)日：2006-02-16

申请号：DE102004026159

申请日：2004-05-28

Applicant: INFINEON TECHNOLOGIES AG ,  EUPEC GMBH & CO KG

Inventor： MAUDER ANTON ,  PASSE THOMAS

IPC: C25D11/02 ,  H01L21/48 ,  H01L21/58 ,  H01L23/50

Abstract: Production of an electronic component comprises forming an insulating layer (3c) as a metal oxide layer by plasma-electrolytic oxidation of the metal. An independent claim is also included for an electronic component produced using the above process.