公开(公告)号：AT286284T

公开(公告)日：2005-01-15

申请号：AT01111670

申请日：2001-05-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEINE ROLF ,  SCHMIDT SEBASTIAN ,  SCHEDEL THORSTEN

IPC: G03F7/20 ,  G03F9/00 ,  G06T7/00 ,  G06T7/33 ,  H01L21/027

Abstract: In an alignment or overlay measurement of patterns on a semiconductor wafer (1) an error ocurring during performing a measurement in one of a predefined number of alignment structures (20) in an exposure field (2) of a corresponding predefined set of exposure fields (10) can be handled by selecting an alignment structure (21b) in a substitute exposure field (11). This exposure field (11) needs not to be part of the predefined set of exposure fields (10), i.e. an inter-field change (101). Thus, the number of alignment measurements on a wafer remains constant and the quality is increased. Alternatively, when using another alignment structure (21a) in the same exposure field (10, 11), i.e. an intra-field change (100), the method becomes particlularly advantageous when different minimum structure sizes are considered for the substitute targets (21a). Due to the different selectivity in e.g. a previous CMP process, such targets (21a) might not erode and do not cause an error in a measurement, thus providing an increased alignment or overlay quality.

公开(公告)号：DE60108082D1

公开(公告)日：2005-02-03

申请号：DE60108082

申请日：2001-05-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEINE ROLF ,  SCHMIDT SEBASTIAN ,  SCHEDEL THORSTEN

IPC: G03F7/20 ,  G03F9/00 ,  G06T7/00 ,  G06T7/33 ,  H01L21/027

Abstract: In an alignment or overlay measurement of patterns on a semiconductor wafer (1) an error ocurring during performing a measurement in one of a predefined number of alignment structures (20) in an exposure field (2) of a corresponding predefined set of exposure fields (10) can be handled by selecting an alignment structure (21b) in a substitute exposure field (11). This exposure field (11) needs not to be part of the predefined set of exposure fields (10), i.e. an inter-field change (101). Thus, the number of alignment measurements on a wafer remains constant and the quality is increased. Alternatively, when using another alignment structure (21a) in the same exposure field (10, 11), i.e. an intra-field change (100), the method becomes particlularly advantageous when different minimum structure sizes are considered for the substitute targets (21a). Due to the different selectivity in e.g. a previous CMP process, such targets (21a) might not erode and do not cause an error in a measurement, thus providing an increased alignment or overlay quality.

公开(公告)号：DE10148021A1

公开(公告)日：2003-04-30

申请号：DE10148021

申请日：2001-09-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEINE ROLF ,  SCHEDEL THORSTEN ,  SPULER BRUNO

IPC: G03F9/00 ,  H01L23/544 ,  H01L21/66

Abstract: The measuring structure (1) has a reference structure (2,2') positioned at or near the surface (6) of the semiconductor wafer or mask and at least 2 protection structures (3,3'',3''',4'',4''') at respective distances from the reference structure and positioned parallel or perpendicular to it. Each of the structures can be provided as a groove formed in the surface of the semiconductor wafer or mask, the protection structures having a width of less than the resolutiuon limit of the optical system used for determining the positioning accuracy.

公开(公告)号：DE60108082T2

公开(公告)日：2005-10-13

申请号：DE60108082

申请日：2001-05-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEINE ROLF ,  SCHMIDT SEBASTIAN ,  SCHEDEL THORSTEN

IPC: G03F7/20 ,  G03F9/00 ,  G06T7/00 ,  G06T7/33 ,  H01L21/027

Abstract: In an alignment or overlay measurement of patterns on a semiconductor wafer (1) an error ocurring during performing a measurement in one of a predefined number of alignment structures (20) in an exposure field (2) of a corresponding predefined set of exposure fields (10) can be handled by selecting an alignment structure (21b) in a substitute exposure field (11). This exposure field (11) needs not to be part of the predefined set of exposure fields (10), i.e. an inter-field change (101). Thus, the number of alignment measurements on a wafer remains constant and the quality is increased. Alternatively, when using another alignment structure (21a) in the same exposure field (10, 11), i.e. an intra-field change (100), the method becomes particlularly advantageous when different minimum structure sizes are considered for the substitute targets (21a). Due to the different selectivity in e.g. a previous CMP process, such targets (21a) might not erode and do not cause an error in a measurement, thus providing an increased alignment or overlay quality.

公开(公告)号：DE10148021B4

公开(公告)日：2005-02-03

申请号：DE10148021

申请日：2001-09-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEINE ROLF ,  SCHEDEL THORSTEN ,  SPULER BRUNO

IPC: G03F9/00 ,  H01L23/544 ,  H01L21/66