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    1.
    发明专利
    未知

    公开(公告)号：DE69935100D1

    公开(公告)日：2007-03-29

    申请号：DE69935100

    申请日：1999-08-12

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： GUTSCHE MARTIN ,  STROBL PETER ,  WEGE MP FE PI ,  LUEKEN EIKE ,  STOJAKOVIC GEORG ,  SPULER BRUNO

    IPC: H01L21/302 ,  H01L21/3213 ,  C23C16/18 ,  H01L21/02 ,  H01L21/3065

    Abstract: A method for reducing polymer deposition on vertical surfaces of metal lines etched from a metallization layer disposed above a substrate. The method includes forming a hard mask layer above the metallization layer and providing a photoresist mask above the hard mask layer. The method further includes employing the photoresist mask to form a hard mask from the hard mask layer. The hard mask has patterns therein configured to form the metal lines in a subsequent plasma-enhanced metallization etch. There is also included removing the photoresist mask. Additionally, there is included performing the plasma-enhanced metallization etch employing the hard mask and an etchant source gas that includes Cl2 and at least one passivation-forming chemical, wherein the plasma-enhanced metallization etch is performed without employing photoresist to reduce the polymer deposition during the plasma-enhanced metallization etch.

    2.
    发明专利
    未知

    公开(公告)号：DE69834686D1

    公开(公告)日：2006-07-06

    申请号：DE69834686

    申请日：1998-03-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： TOBBEN DIRK ,  SPULER BRUNO ,  GUTSCHE MARTIN ,  WEIGAND PETER

    IPC: H01L21/768 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L23/12 ,  H05K1/00 ,  H05K3/06 ,  H05K3/22 ,  H05K3/24

    Abstract: A method for forming a plurality of electrically conductive wires on a substrate. The method includes forming a relatively non-planar metal layer over a surface of the substrate. A self-planarizing material is deposited over the metal layer. The self-planarizing material forms a planarization layer over the surface of the metal layer. The planarization layer has a surface relatively planar compared to the relatively non-planar metal layer. A photoresist layer is deposited over the surface of the planarization layer. The photoresist layer is patterned with a plurality of grooves to form a mask with such grooves exposing underling portions of the planarization layer. The photoresist mask is used as a mask to etch grooves in the exposed portions of the planarization layer and thereby form a second mask. The second mask exposes underling portions of the relatively non-planar metal layer. The second mask is used to etch grooves in the relatively non-planar conductive metal layer and thereby form the plurality of electrically conductive wires in the metal layer. The wires are separated from each other by the grooves formed in the relatively non-planar metal layer. The planarization layer is formed by a spinning-on an organic polymer, for example an organic polymer having silicon, or a flowable oxide, or a hydrogensilsequioxane, or divinyl-siloxane-benzocyclobutene. The metal layer is etched using reactive ion etching. The planarization layer is removed using a wet chemical etch.

    3.
    发明专利
    未知

    公开(公告)号：DE69834686T2

    公开(公告)日：2007-05-31

    申请号：DE69834686

    申请日：1998-03-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： TOBBEN DIRK ,  SPULER BRUNO ,  GUTSCHE MARTIN ,  WEIGAND PETER

    IPC: H01L21/768 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L23/12 ,  H05K1/00 ,  H05K3/06 ,  H05K3/22 ,  H05K3/24

    Abstract: A method for forming a plurality of electrically conductive wires on a substrate. The method includes forming a relatively non-planar metal layer over a surface of the substrate. A self-planarizing material is deposited over the metal layer. The self-planarizing material forms a planarization layer over the surface of the metal layer. The planarization layer has a surface relatively planar compared to the relatively non-planar metal layer. A photoresist layer is deposited over the surface of the planarization layer. The photoresist layer is patterned with a plurality of grooves to form a mask with such grooves exposing underling portions of the planarization layer. The photoresist mask is used as a mask to etch grooves in the exposed portions of the planarization layer and thereby form a second mask. The second mask exposes underling portions of the relatively non-planar metal layer. The second mask is used to etch grooves in the relatively non-planar conductive metal layer and thereby form the plurality of electrically conductive wires in the metal layer. The wires are separated from each other by the grooves formed in the relatively non-planar metal layer. The planarization layer is formed by a spinning-on an organic polymer, for example an organic polymer having silicon, or a flowable oxide, or a hydrogensilsequioxane, or divinyl-siloxane-benzocyclobutene. The metal layer is etched using reactive ion etching. The planarization layer is removed using a wet chemical etch.

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