公开(公告)号：DE10135927A1

公开(公告)日：2003-02-20

申请号：DE10135927

申请日：2001-07-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERSCH ALFRED ,  JACOBS WERNER ,  SCHULZE-ICKING GEORG

IPC: H01L21/285 ,  H01L21/3205 ,  H01L21/8239 ,  H01L21/768

Abstract: Production of a conductor strip over a stepped substrate region of an integrated circuit, especially a word line in semiconductor memories, comprises depositing a first tungsten nitride/tungsten layer (11) over the stepped substrate region (1) made from polysilicon up to approximately half the nominal layer thickness of the strip; and depositing a second tungsten nitride/tungsten layer (12) over the first tungsten nitride/tungsten layer to reach the nominal layer thickness of the strip using ionized PVD without or under reduced substrate bias. Preferred Features: The process further comprises structuring the two tungsten nitride/tungsten layers. The voltage of the substrate bias is selected so that the tungsten nitride/tungsten material is re-sputtered from the base of a shallow trench isolation.

公开(公告)号：DE10137569A1

公开(公告)日：2003-02-27

申请号：DE10137569

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERSCH ALFRED ,  JACOBS WERNER ,  SCHULZE ICKING GEORG

IPC: H01L21/3065 ,  H01L21/8242

Abstract: Production of a trench (10) in a semiconductor material comprises forming a reactive substance outside the reaction chamber (1) in a reaction space (3) from a precursor. An Independent claim is also included for a device for carrying out the process. Preferred Features: The reactive substance is produced by a plasma source. A precursor of the reactive substance is fed to the reaction chamber. The reactive substance is a reactive radical, especially an atomic halogen or halogen-containing radical. The trench is formed by reactive ion etching.