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公开(公告)号:DE10211037A1
公开(公告)日:2003-06-26
申请号:DE10211037
申请日:2002-03-13
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BARTHOLOMAEUS LARS , GRAF WERNER , JOSIEK ANDREI , WICHTENDAHL RALPH
IPC: G11C29/00 , G11C29/50 , H01L23/544 , H01L27/11 , H01L21/66
Abstract: Memory cells are part of two or more integrated circuits (ICs). A testing structure fits between the ICs and has a memory cell (250) with connecting strip conductors (201-206) running in a strip conductor surface of metal and each linking to doping areas (241,243-4,245-7) for transistors (Q1-Q6) via vertical contacts (V1-V6). An Independent claim is also included for a semiconductor disk with two or more integrated circuits set apart from each other and a testing structure between these integrated circuits.