公开(公告)号：DE10007416C1

公开(公告)日：2001-06-21

申请号：DE10007416

申请日：2000-02-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  PFIRSCH FRANK ,  KASCHANI KARIM-THOMAS TAGHIZAD

IPC: H01L27/07 ,  H02M3/00 ,  H01L29/78 ,  H01L29/872 ,  H02M7/48

Abstract: A controlled semiconductor arrangement of a MOS-field-effect transistor (T), a diode (D) and a Schottky diode (SD), in which the source or drain of the MOSFET (T) are connected to the anode of the Schottky diode (SD). The bulk-zone of the MOSFET (T) is connected via the anode contact (8) of the diode (D) to the drain (5;4) or source (4;5) of the MOSFET (T), the latter being specifically a n-channel MOS- FET (T), and the diode a pn n-diode structure.