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公开(公告)号：DE102005019587B4
公开(公告)日：2007-05-10
申请号：DE102005019587
申请日：2005-04-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： KNOPF MATTHIAS , KRAUS STEPHAN , LEHMANN GUNTHER
Abstract: The device has non-volatile fuse memory cells (F1, F2), and programming units for programming the memory cells. The programming unit has a potential terminal that is constantly supplied with a fixed potential (VDDFS). Two metal-oxide-semiconductor (MOS) transistors (T3, T4) selectively connect or separate the potential terminal with or from a programming terminal of the memory cells. The fixed potential serves to vary electrical characteristic of the memory cell for causing a varied non-volatile programming condition of the memory cell. An independent claim is also included for a method of operating a memory device.
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公开(公告)号：DE102005019587A1
公开(公告)日：2006-11-09
申请号：DE102005019587
申请日：2005-04-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： KNOPF MATTHIAS , KRAUS STEPHAN , LEHMANN GUNTHER
Abstract: The device has non-volatile fuse memory cells (F1, F2), and programming units for programming the memory cells. The programming unit has a potential terminal that is constantly supplied with a fixed potential (VDDFS). Two metal-oxide-semiconductor (MOS) transistors (T3, T4) selectively connect or separate the potential terminal with or from a programming terminal of the memory cells. The fixed potential serves to vary electrical characteristic of the memory cell for causing a varied non-volatile programming condition of the memory cell. An independent claim is also included for a method of operating a memory device.
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