公开(公告)号：DE102006035121B4

公开(公告)日：2011-05-19

申请号：DE102006035121

申请日：2006-07-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PRECHTL GERHARD ,  KREUZBERG MARCEL

IPC: H01L29/73 ,  H01L29/735

公开(公告)号：DE102006035121A1

公开(公告)日：2008-01-31

申请号：DE102006035121

申请日：2006-07-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PRECHTL GERHARD ,  KREUZBERG MARCEL

IPC: H01L29/73 ,  H01L29/735

Abstract: The transistor comprises a semiconductor region (1) of a type of conductivity and an insulation structure (2), which surrounds semiconductor region in semiconductor body of an other conductivity type opposite to former conductivity type. The collector structure (7) is formed within the semiconductor region of later conductivity type of an emitter (6). The collector structure has openings (8) through which the structure is divided in collector zones, which are arranged in such a manner that a smaller lateral distance (9) of the emitter runs through a collector zone for insulation structure.