公开(公告)号：DE50014661D1

公开(公告)日：2007-10-31

申请号：DE50014661

申请日：2000-03-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEIDER HELMUT ,  LINDOLF JUERGEN DR ,  BORST THOMAS ,  RUCKERBAUER HERMANN

IPC: H01L21/761 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L29/10 ,  H01L29/78 ,  H03F3/16

Abstract: The field effect transistor (10) is located in a trough (9) formed by an n+ type conduction buried layer (5) and n-type conduction diffusion regions (7,8). The gate to source voltage (Vth) can be controlled by adjusting the negative trough potential (VBS)