公开(公告)号：DE59707274D1

公开(公告)日：2002-06-20

申请号：DE59707274

申请日：1997-08-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LUSTIG DR ,  SCHAEFER DR ,  FRANOSCH MARTIN

IPC: H01L21/8238 ,  H01L21/8256 ,  H01L21/84 ,  H01L21/86 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786

Abstract: An integrated complementary metal oxide semiconductor (CMOS) circuit structure has semiconductor islands (6) which have Si1-xGex and strained silicon layers (4, 5) with the same lattice constants and which are formed on an insulating layer (2) on a support (1), p-channel and n-channel MOS transistors being provided in respective islands. Also claimed is the production of an integrated CMOS circuit structure, in which: (a) the silicon layer (3) of a silicon-on-insulator (SOI) substrate (1, 2, 3) is structured to form islands and partially expose the insulating layer (2) surface; (b) a Si1-xGex layer (4) and a strained silicon layer (5) are produced on the structured silicon layer (3) to form semiconductor islands (6); (c) the thickness of the Si1-xGex layer (4) is chosen in accordance with that of the structured silicon layer (3) to achieve lattice constant matching; and (d) n-channel and/or p-channel transistors are formed in the semiconductor islands (6).