公开(公告)号：DE102005049793B3

公开(公告)日：2007-07-05

申请号：DE102005049793

申请日：2005-10-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUDERER ERWIN ,  LUTZ WALTHER

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/336

Abstract: A process of manufacturing a semiconductor circuit includes providing a substrate layer, forming a metal layer above the substrate layer, incorporating circuit components in the substrate layer, and electrically connecting the circuit components to the metal layer. The process includes configuring the circuit components to perform an electrical function of the semiconductor circuit. The semiconductor circuit has a specific electrical conductivity between the substrate layer and the metal layer based on the electrical function performed. The process includes increasing the electrical conductivity between the substrate layer and the metal layer compared with the specific electrical conductivity.