Abstract:
PROBLEM TO BE SOLVED: To provide a planar self-alignment double-gate transistor by a known, simple, cost-effective manufacturing method. SOLUTION: The manufacturing method includes a step for prescribing an active region on an SOI substrate; a step for forming a first gate region 206 on the SOI substrate; a step for forming a source/drain region made of silicon germanium in the active region; a step for forming a channel region 203 from a silicon layer on the SOI substrate; a step for forming a layer 311 having a plane on the SOI substrate, the source/drain region, and the first gate region 206; a step for connecting a wafer in which a silicon oxide 413 is formed on the plane; and a step for forming a second gate region 517 facing the first gate region 206. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a layer structure used as a double-gate field effect transistor, and to provide a method for manufacturing the layer structure. SOLUTION: A porous silicon layer is formed on an auxiliary substrate as a sacrifice layer. A first semiconductor layer and a first electric insulating layer are successively formed on the sacrifice layer. On the first electric insulating layer, a conductive layer is formed for laterally forming a pattern. The laterally pattern-formed conductive layer is used as a common mask for laterally pattern-forming the first electric insulating layer, the sacrifice layer, and the first semiconductor layer. A semiconductor section is formed adjacent to the sidewall of the pattern-formed sacrifice layer and that of the first pattern-formed semiconductor layer. A substrate is fixed to the upper portion of the pattern-formed conductive layer, and the material of the auxiliary substrate is removed, thus exposing the sacrifice layer. The sacrifice layer is selectively removed, thus forming a trench. In the trench, a second electric insulating layer is formed, and a conductive section is formed on the second electric insulating layer. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
The invention relates to a semiconductor memory with a number of memory cells, whereby each of the memory cells comprises four vertical memory transistors with trapping layers. The shallower contact regions are embodied in a semiconductor region running at an angle to the lines and gaps of the cell field, whereby the gate electrode preferably runs on the stage lateral surfaces of the shallower semiconductor region. A memory density of 1-2F per bit may thus be achieved.
Abstract:
The invention relates to electrodes which are provided with molecules that can bind macromolecular biopolymers. A first electric measurement is carried out on the electrodes. A medium is contacted to said electrodes in such a way that biopolymers can specifically bind to first molecules or second molecules which are applied to the electrodes, when macromolecular biopolymers are present in the medium. Unbound first or second molecules are removed from the respective electrode and a second electric measurement is carried out. The macromolecular biopolymers are detected according to the measurements.
Abstract:
A memory element with organic material comprises two metallised layers, arranged one on top of the other, with first lines and second lines which are arranged to intersect with each other. A channel is formed at the intersections between the first line and the second line, which overlaps the first line partially and completely overlaps the second line. The channels are filled with a filling material, the electrical conductivity of which may be altered by an applied electrical voltage.
Abstract:
The invention relates to a substrate comprising a buried layer. According to the invention, a silicon carrier wafer has a buried first silicon-germanium-carbon layer, on which a silicon layer is configured.
Abstract:
The invention relates to a substrate (600) which is provided with a support layer (501). An insulator layer (502) is applied to the support layer (501), comprising at least two areas having respectively different thicknesses. A semi-conductor layer (303) having an FD-area (304) and a PD-area (305) is applied to the surface of the insulating layer (502), comprising a planar surface. The planar surface is the surface which is opposite the insulating layer (502).
Abstract:
The biochip comprises a substrate, at least one sensor, arranged on or in the substrate and an electrically conducting permeation layer, arranged at a given, non-zero separation from the surface of the substrate, to which an electrical voltage may be applied. The biochip arrangement may be used, for example, as a DNA sensor, whereby a receptor molecule, immobilised on the sensor electrode, hybridises a DNA molecule and thus an electrical sensor signal which may be drawn from between sensor electrodes, is influenced in a characteristic manner.
Abstract:
The sensor for detecting macromolecular biomolecules comprises a radiation detector and a radiolucent adhesive layer, which is arranged above the radiosensitive side of the radiation detector and which is provided as to enable scavenger molecules to bind to the adhesive layer. The existence of macromolecular biomolecules, which are complementary or specific to the structure of the scavenger molecules, in the solution to be examined can be concluded based on the evaluation of radiation detector output signals.
Abstract:
The invention relates to a method of detecting macromolecular biopolymers by means of an electrode arrangement that comprises a first and a second electrode. The inventive method is characterized by carrying out a first electrical measurement on the electrodes. In a further step, a solution to be examined, which may contain the macromolecular biopolymers to be detected, is contacted with the electrode arrangement. In another step, the macromolecular biopolymers to be detected that are contained it the solution to be examined are bound to the scavenger molecules on the first and on the second electrode and the electrode arrangement is contacted with a reagent to increase conductivity of the macromolecular biopolymers, said reagent binding to the macromolecular biopolymers and bestowing them with electroconductivity. A second electrical measurement is carried out on the electrodes and the macromolecular biopolymers are detected on the basis of the comparison of the results of the two electrical measurements on the electrodes.