公开(公告)号：DE69826015D1

公开(公告)日：2004-10-07

申请号：DE69826015

申请日：1998-07-17

Applicant: SYMETRIX CORP ,  INFINEON TECHNOLOGIES AG

Inventor： SCHINDLER GUNTHER ,  HARTNER WALTER ,  MAZURE CARLOS ,  SOLAYAPPAN NARAYAN ,  JOSHI VIKRAM ,  DERBENWICK F

IPC: C23C18/12 ,  H01L21/314 ,  H01L21/316

Abstract: A liquid precursor containing a metal is applied to a first electrode, dried in air at a first temperature of 160 DEG C. and then a second temperature of 260 DEG C., RTP baked at a temperature of 300 DEG C. in oxygen, RTP baked at a temperature of 650 DEG C. in nitrogen, and annealed at a temperature of 800 DEG C. in nitrogen to form a strontium bismuth tantalate layered superlattice material. A second electrode is deposited and then the device is patterned to form a capacitor, and a second anneal is performed at a temperature of 800 DEG C. in nitrogen. Alternatively, the second anneal may be performed in oxygen at a temperature of 600 DEG C. or less. In this manner, a high electronic quality thin film of a layered superlattice material is fabricated without a high-temperature oxygen anneal.

公开(公告)号：DE10053170C2

公开(公告)日：2002-09-26

申请号：DE10053170

申请日：2000-10-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SITARAM ARKALGUD ,  MAZURE CARLOS ,  DEHM CHRISTINE

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/11507 ,  H01L27/105 ,  H01L21/8239

公开(公告)号：DE10053170A1

公开(公告)日：2002-05-16

申请号：DE10053170

申请日：2000-10-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SITARAM ARKALGUD ,  MAZURE CARLOS ,  DEHM CHRISTINE

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/11507 ,  H01L27/105 ,  H01L21/8239

公开(公告)号：DE10053172A1

公开(公告)日：2002-05-16

申请号：DE10053172

申请日：2000-10-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SITARAM ARKALGUD ,  MAZURE CARLOS ,  DEHM CHRISTINE

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/8246 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11507 ,  H01L23/522 ,  H01L21/8239 ,  H01L27/105

公开(公告)号：DE69826015T2

公开(公告)日：2005-09-15

申请号：DE69826015

申请日：1998-07-17

Applicant: SYMETRIX CORP ,  INFINEON TECHNOLOGIES AG

Inventor： SCHINDLER GUNTHER ,  HARTNER WALTER ,  MAZURE CARLOS ,  SOLAYAPPAN NARAYAN ,  JOSHI VIKRAM ,  DERBENWICK F

IPC: C23C18/12 ,  H01L21/314 ,  H01L21/316

Abstract: A liquid precursor containing a metal is applied to a first electrode, dried in air at a first temperature of 160 DEG C. and then a second temperature of 260 DEG C., RTP baked at a temperature of 300 DEG C. in oxygen, RTP baked at a temperature of 650 DEG C. in nitrogen, and annealed at a temperature of 800 DEG C. in nitrogen to form a strontium bismuth tantalate layered superlattice material. A second electrode is deposited and then the device is patterned to form a capacitor, and a second anneal is performed at a temperature of 800 DEG C. in nitrogen. Alternatively, the second anneal may be performed in oxygen at a temperature of 600 DEG C. or less. In this manner, a high electronic quality thin film of a layered superlattice material is fabricated without a high-temperature oxygen anneal.