公开(公告)号：DE60301344D1

公开(公告)日：2005-09-22

申请号：DE60301344

申请日：2003-04-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEUSCHNER RAINER ,  STOJAKOVIC GEORGE ,  NING J

IPC: H01L27/105 ,  G11C11/16 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  G11C11/15

Abstract: A resistive memory device (110) and method of manufacturing thereof comprising a cap layer (140) and hard mask layer (142) disposed over magnetic stacks (114), wherein either the cap layer (140) or hard mask layer (142) comprise WN. A seed layer (136) disposed beneath the magnetic stacks (114) may also be comprised of WN, The use of the material WN improves etch process selectivity during the manufacturing process.

公开(公告)号：DE60301344T2

公开(公告)日：2006-06-08

申请号：DE60301344

申请日：2003-04-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEUSCHNER RAINER ,  STOJAKOVIC GEORGE ,  NING J

IPC: G11C11/15 ,  H01L27/105 ,  G11C11/16 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08

Abstract: A resistive memory device (110) and method of manufacturing thereof comprising a cap layer (140) and hard mask layer (142) disposed over magnetic stacks (114), wherein either the cap layer (140) or hard mask layer (142) comprise WN. A seed layer (136) disposed beneath the magnetic stacks (114) may also be comprised of WN, The use of the material WN improves etch process selectivity during the manufacturing process.