公开(公告)号：WO0169652A2

公开(公告)日：2001-09-20

申请号：PCT/DE0100582

申请日：2001-02-15

Applicant: INFINEON TECHNOLOGIES AG ,  OBERMEIER HERBERT ,  GOELLNER REINHARD

Inventor： OBERMEIER HERBERT ,  GOELLNER REINHARD

IPC: H01L21/3213 ,  H01L21/60 ,  H01L

CPC classification number: H01L21/32134 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01072 ,  H01L2924/04941 ,  H01L2924/19042

Abstract: A TiN coating on a bondpad is removed by means of an aqueous solution of H2O2 and a chemical base. An oxide coating on the surface of the bondpad is then removed by means of a weak or diluted chemical base.

Abstract translation: 通过H 2 O 2和化学碱的水溶液除去键合垫上的一层TiN; 然后通过弱或稀释的化学基质除去键合焊盘表面上形成的氧化层。

公开(公告)号：DE10257681B4

公开(公告)日：2008-11-13

申请号：DE10257681

申请日：2002-12-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OBERMEIER HERBERT ,  GOELLNER REINHARD

IPC: H01L21/768 ,  H01L23/532

Abstract: The document explains, inter alia, a method in which a titanium nitride layer is removed by wet chemical means ( 106 ). Following removal of the titanium nitride, further metallization strata are produced ( 114 ). The result is an integrated circuit arrangement having connections which have a low electrical resistance. The circuit arrangement is particularly suitable for the purpose of switching high powers.

公开(公告)号：DE10014915B4

公开(公告)日：2007-08-16

申请号：DE10014915

申请日：2000-03-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OBERMEIER HERBERT ,  GOELLNER REINHARD

IPC: H01L21/60 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/768

公开(公告)号：DE10014915A1

公开(公告)日：2001-10-04

申请号：DE10014915

申请日：2000-03-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OBERMEIER HERBERT ,  GOELLNER REINHARD

IPC: H01L21/3213 ,  H01L21/60 ,  H01L21/28 ,  H01L21/768

Abstract: Process for removing titanium nitride from a bond pad comprises removing the titanium nitride using an aqueous solution of H2O2 and a chemical base; then removing the oxide layer present on the bond pad using a weakly basic medium. The process preferably further comprises applying an oxide layer of prescribed thickness to the bond pad in a controlled way. The chemical base is NH3. The titanium nitride is removed from the surface made from aluminum, copper or aluminum alloy or copper alloy.

公开(公告)号：DE10257681A1

公开(公告)日：2004-07-08

申请号：DE10257681

申请日：2002-12-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OBERMEIER HERBERT ,  GOELLNER REINHARD

IPC: H01L21/768 ,  H01L23/532

Abstract: The document explains, inter alia, a method in which a titanium nitride layer is removed by wet chemical means ( 106 ). Following removal of the titanium nitride, further metallization strata are produced ( 114 ). The result is an integrated circuit arrangement having connections which have a low electrical resistance. The circuit arrangement is particularly suitable for the purpose of switching high powers.