公开(公告)号：DE69930027T2

公开(公告)日：2006-09-14

申请号：DE69930027

申请日：1999-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PARK YOUNG-JIN

IPC: H01L21/28 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: A method for forming a metalization system is provided. The method includes providing a substrate. A dielectric layer is formed over a surface of the substrate. A plurality of via holes is formed into a surface and the dielectric layer, such holes passing through the dielectric layer. Recesses are formed in the surface of the dielectric layer, such recesses terminating in a portion of the plurality of via holes passing through the dielectric layer. A metalization layer is deposited over the surface of the dielectric layer, portions of the metalization layer passing through the via holes, portions of the metalization layer being disposed in the recesses and portions of the metalization layer being disposed on the surface of the dielectric layer. The metalization layer is patterned into a plurality of conductors, one portion of the conductors being disposed on one level of the dielectric layer and another portion of the conductors disposed in the recesses. A metalization system having a substrate with a dielectric layer disposed over such substrate. A plurality of electrical conductors is provided, one portion of the conductors being disposed on one level of the dielectric layer and another portion of the conductors being recessed in a surface portion of the dielectric layer.

公开(公告)号：DE10245179A1

公开(公告)日：2003-05-15

申请号：DE10245179

申请日：2002-09-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MUELLER GERHARD ,  PARK YOUNG-JIN

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: An integrated circuit comprises first lines (220) on a first plane (260); and second lines (225) on a second plane (265). At least one of the first or second lines comprises a non-rectangular cross-section. An Independent claim is also included for the production of an integrated circuit. Preferred Features: At least one of the first or second lines comprises a non-vertical side wall which tapers toward the other side wall. At least one of the first or second lines has a triangular cross-section. The second lines of the second plane are arranged over the first lines of the first plane.

公开(公告)号：DE69930027D1

公开(公告)日：2006-04-27

申请号：DE69930027

申请日：1999-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PARK YOUNG-JIN

IPC: H01L21/28 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: A method for forming a metalization system is provided. The method includes providing a substrate. A dielectric layer is formed over a surface of the substrate. A plurality of via holes is formed into a surface and the dielectric layer, such holes passing through the dielectric layer. Recesses are formed in the surface of the dielectric layer, such recesses terminating in a portion of the plurality of via holes passing through the dielectric layer. A metalization layer is deposited over the surface of the dielectric layer, portions of the metalization layer passing through the via holes, portions of the metalization layer being disposed in the recesses and portions of the metalization layer being disposed on the surface of the dielectric layer. The metalization layer is patterned into a plurality of conductors, one portion of the conductors being disposed on one level of the dielectric layer and another portion of the conductors disposed in the recesses. A metalization system having a substrate with a dielectric layer disposed over such substrate. A plurality of electrical conductors is provided, one portion of the conductors being disposed on one level of the dielectric layer and another portion of the conductors being recessed in a surface portion of the dielectric layer.