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公开(公告)号：DE10058216C1
公开(公告)日：2002-06-06
申请号：DE10058216
申请日：2000-11-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTSCH CHRISTIAN
Abstract: The spacing measuring method has an image of the integrated circuit or photomask exhibiting the periodic structure subjected to a Fourier transformation, with detection of a maximum of the first order and a maximum of zero order within the Fourier transformation and calculation of the spacing of the periodic structure from the distance between the detected maxima.
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公开(公告)号：DE10339745A1
公开(公告)日：2005-03-31
申请号：DE10339745
申请日：2003-08-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTSCH CHRISTIAN
Abstract: Method for removing impurities from the end region (3) of a probe (2) mounted on a support element (1), whereby the probe end region is uncovered and can be easily brought into contact with a sample (6). Cleaning is carried out by heating the end regions to a temperature at which impurities are vaporized. Independent claims are also included for the following:- (a) a scanning probe unit with a control device that controls a heater so that impurities on the end of a probe are vaporized and; (b) a scanning probe unit with a device for decomposing impurities on the end of a probe using electromagnetic radiation of suitable wavelength.
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公开(公告)号：DE102004020657A1
公开(公告)日：2005-11-17
申请号：DE102004020657
申请日：2004-04-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTSCH CHRISTIAN
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公开(公告)号：DE10324502B3
公开(公告)日：2005-04-21
申请号：DE10324502
申请日：2003-05-26
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTSCH CHRISTIAN
Abstract: A mask set for the production of integrated circuit chips, wherein a first mask has first features that form inner cell regions and a second mask has second features that form outer non-cell regions, so that the first and second masks do no expose a same region of a semiconductor wafer. An exposure system includes the mask set with an aperture device to fade out partial regions of the first features during exposure of the wafer by a light source. Furthermore, the mask set is used in a method of exposing a wafer for producing integrated circuit chips.
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公开(公告)号：DE10245621A1
公开(公告)日：2004-04-22
申请号：DE10245621
申请日：2002-09-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HAFFNER HENNING , BUECHNER BETTINE , ROTSCH CHRISTIAN
Abstract: A mask is to be prepared for a memory chip which has four memory cell fields (12). As shown in the circuit plan (10) each cell has six measurement reference positions (20) provided by the end customer to the mask manufacturer. The invention proposes that a step is introduced in the production of the mask using this information to give the actual coordinates of the circuit structural elements (18) and not deduced measurement structures.
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Patent Agency Ranking
公开(公告)号：DE10039337A1
公开(公告)日：2002-02-28
申请号：DE10039337
申请日：2000-08-04
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTSCH CHRISTIAN
IPC: G01Q10/00 , G01M11/02 , G01N21/956 , G01Q30/02 , G01Q40/00 , G01Q60/00 , G02B21/00 , G03F1/00 , G12B21/08 , G12B21/20
Abstract: A scanning device (37) is positioned above the coated surface of the mask (32) and an optical microscope (34) below. Initially their positions are adjusted until the scanning point (38) of the scanning device is visible in the microscope image, i.e. they are lined up on the ON-axis. Thereafter they are retained in these relative positions whilst the table (33) holding the mask is adjusted in the x,y directions by step motors (41,42) to inspect the mask.
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公开(公告)号：DE50104813D1
公开(公告)日：2005-01-20
申请号：DE50104813
申请日：2001-08-01
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTSCH CHRISTIAN
IPC: G01Q10/00 , G01M11/02 , G01N21/956 , G01Q30/02 , G01Q40/00 , G01Q60/00 , G02B21/00 , G03F1/00 , G12B21/08
Abstract: A scanning device (37) is positioned above the coated surface of the mask (32) and an optical microscope (34) below. Initially their positions are adjusted until the scanning point (38) of the scanning device is visible in the microscope image, i.e. they are lined up on the ON-axis. Thereafter they are retained in these relative positions whilst the table (33) holding the mask is adjusted in the x,y directions by step motors (41,42) to inspect the mask.
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公开(公告)号：DE10219330A1
公开(公告)日：2003-11-20
申请号：DE10219330
申请日：2002-04-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTSCH CHRISTIAN
Abstract: Probe (10) for scanning force microscopy has a mounting region, a sprung element region (30) fixed to the end of the mounting region, and a sampling or interaction area (40) formed at the distal end (32) of the sprung region. The sampling or interaction area has a multiplicity of sampling or interaction elements (51, 52) that are configured to interact with or sample a microscopy sample. The invention also relates to a corresponding scanning force microscope, a profile meter and a scanning force microscopy method.
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公开(公告)号：DE10115888A1
公开(公告)日：2002-10-24
申请号：DE10115888
申请日：2001-03-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SCHAETZ THOMAS , DIETRICH RALF , ROTSCH CHRISTIAN , LUDWIG RALF
Abstract: Method for individual mark calibration for masks (M) whose structural flanks have varying flank angles. Each mask first undergoes optical measurements for isolating structures (PCI), then the same structures undergo AFM or SEM measurements with the results of the two measurements used to create a calibration offset between optical and or SEM or AFM measurements that can then be applied to other structures that cannot be optically measured.
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公开(公告)号：DE10245621B4
公开(公告)日：2006-12-28
申请号：DE10245621
申请日：2002-09-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HAFFNER HENNING , BUECHNER BETTINE , ROTSCH CHRISTIAN
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