公开(公告)号：JP2010161363A

公开(公告)日：2010-07-22

申请号：JP2009299200

申请日：2009-12-29

Applicant: Infineon Technologies Ag ,  Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation ,  インフィネオン・テヒノロギー アーゲー

Inventor： MEIRING JASON E ,  HAFFNER HENNING

IPC: H01L21/027 ,  G03F1/08

CPC classification number: G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide a method of arranging printing assist features in a mask layout. SOLUTION: The method includes the steps of providing a design layout having one or a plurality of design feature(s), generating a set of parameters relating to one or a plurality of printing assist feature(s) (PrAF), adding the PrAFs relating to the set of parameters to the design layout to change the design layout, executing simulation of the changed one or the plurality of design feature(s), verifying whether the PrAF is removable based on a result of simulation, and generating a set of PrAF arrangement rules based on the set of parameters when the PrAF is verified to be removable. A final set of PrAFs used in a mask layout can be generated using the PrAF arrangement rule. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在掩模布局中布置打印辅助特征的方法。 解决方案：该方法包括以下步骤：提供具有一个或多个设计特征的设计布局，生成与一个或多个打印辅助特征（PrAF）相关的一组参数，添加 将与设计布局的参数集相关的PrAF改变设计布局，执行改变的一个或多个设计特征的仿真，基于模拟结果验证PrAF是否可移除，以及生成 当PrAF被验证为可移动时，基于参数集合的一组PrAF布置规则。 可以使用PrAF安排规则生成在面罩布局中使用的最后一组PrAF。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2002140381A

公开(公告)日：2002-05-17

申请号：JP2001271402

申请日：2001-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  HAFFNER HENNING ,  FRIEDRICH CHRISTOPH

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G06F17/50 ,  H01L21/027 ,  H01L21/66 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a simple method for generating mask layout data for a lithography mask which keeps a new layout very similar to a mask manufactured by using original data at a low cost. SOLUTION: The method for generating the mask layout data for, specially, lithography simulation is described. The original data (12) defining an original layout (10) are prescribed. New data (54) are automatically computed (34) according to the original data. The new data (54) are computed (34) from the mask manufactured according to the layout according to a rule based upon the deviation of the layout shape (38, 40). This procedure is followed to evade complicated simulation at a method stage of a manufacturing process.

公开(公告)号：WO03025678A3

公开(公告)日：2003-10-09

申请号：PCT/DE0203196

申请日：2002-08-28

Applicant: INFINEON TECHNOLOGIES AG ,  ALBRECHT THOMAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  JAEHNERT CARMEN ,  KRONEFELD OLAF ,  STIEGLER MANFRED

Inventor： ALBRECHT THOMAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  JAEHNERT CARMEN ,  KRONEFELD OLAF ,  STIEGLER MANFRED

IPC: G03F1/00 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F1/84 ,  G03F7/70525 ,  G03F7/70541 ,  G03F7/70741

Abstract: The invention relates to a method and a device for control of the data flow on application of reticles in a semiconductor component production, characterised in that the reticles each have a unique structured reticle data set, whereby the content of the reticle data set can be automatically altered and/or completed, depending on the production process for a semiconductor component. The application of reticles in a semiconductor component production can thus be efficiently controlled.

Abstract translation: 本发明涉及一种方法，以及用于控制在在半导体器件生产中使用的标线的数据的流动的设备，其特征在于，所述标线清楚地结构化的标线片被分配，其中，所述掩模版的响应的内容的半导体器件的制造工序中 自动改变和/或补充。 因此，使用分划板可以有效地控制在一个半导体器件的制造。

公开(公告)号：DE10360536B4

公开(公告)日：2006-12-21

申请号：DE10360536

申请日：2003-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  FRANGEN ANDREAS

IPC: G01M11/00 ,  G01M11/08

公开(公告)号：DE10051719C2

公开(公告)日：2003-10-02

申请号：DE10051719

申请日：2000-10-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLING SABINE ,  SAVIGNAC DOMINIQUE ,  MOLL HANS-PETER ,  HAFFNER HENNING ,  HIETSCHOLD ELKE

IPC: H01L21/768 ,  H01L21/8242 ,  H01L23/528 ,  H01L27/02 ,  H01L27/105 ,  H01L21/312 ,  H01L21/8239 ,  H01L27/108

Abstract: The method involves using a lithographic process, whereby photo-lacquer structures are formed on the semiconducting substrate (5) to define dummy circuit structures. If an envisaged dummy structure (4) is smaller than a minimum size determined by the smallest required adhesive surface for photo-lacquer the first dummy structure is combined with a second to exceed the minimum size. An independent claim is also included for the following: a semiconducting substrate with functional circuit structures and dummy structures.

公开(公告)号：DE10360536A1

公开(公告)日：2005-05-12

申请号：DE10360536

申请日：2003-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  FRANGEN ANDREAS

IPC: G01M11/00 ,  G01M11/08

Abstract: A semiconductor wafer processing mask set mask (6, 8) inspection procedure overlays and compares registered structure patterns (16, 18) in successive images (30, 31) of different masks to give a combined image (33) and compares it with reference image (35) of the required resist pattern for defect classification. Independent claims are included for equipment using the procedure.

公开(公告)号：DE10133127C2

公开(公告)日：2003-06-26

申请号：DE10133127

申请日：2001-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THIELE JOERG ,  ANKE INES ,  HAFFNER HENNING ,  SEMMLER ARMIN ,  FISCHER WERNER

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20

公开(公告)号：DE10115294C1

公开(公告)日：2002-08-08

申请号：DE10115294

申请日：2001-03-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  KATZWINKEL FRANK

IPC: G03F1/00 ,  H01L21/8242

公开(公告)号：DE102004014482B4

公开(公告)日：2007-05-03

申请号：DE102004014482

申请日：2004-03-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  MAREK PETER ,  HAY BERND ,  DOEHR NINA ,  KATZWINKEL FRANK ,  JAEHNERT CARMEN

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

Abstract: Tolerances to be communicated to the manufacturer for a photomask fabrication process that are assigned as desired values of feature sizes to be realized on the photomask, are freed of restrictions by predefining, for a first feature size, a first desired value and a first tolerance assigned to the first desired value. The real discrepancy between the first feature size and the first desired value is taken into account when predefining desired values assigned to the further feature sizes to be provided on the photomask. As a result, a value which corresponds to a first approximation to the permitted feature size tolerance on the semiconductor wafer is provided for the tolerances of the desired values.

公开(公告)号：DE10245621B4

公开(公告)日：2006-12-28

申请号：DE10245621

申请日：2002-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  BUECHNER BETTINE ,  ROTSCH CHRISTIAN

IPC: G03F7/20 ,  G03F1/00 ,  G06F17/50