公开(公告)号：GB2421853B

公开(公告)日：2007-01-31

申请号：GB0526065

申请日：2005-12-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KELLNER-WERDEHAUSEN UWE ,  SCHOLZ DETLEF ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM ,  SCHNEIDER CARSTEN

IPC: H01L29/74

Abstract: The arrangement has a p-doped base comprises a resistance zone (65) that extends in a vertical direction. The resistance zone comprises a specific electrical resistance. An external resistance (30) is provided outside of a semiconductor body, where the zone and external resistance comprises temperature coefficients. The coefficients of the external resistance are smaller than the coefficients of the zone in a specific temperature range. An independent claim is also included for a method for manufacturing a thyristor arrangement.

公开(公告)号：DE102004062183B3

公开(公告)日：2006-06-08

申请号：DE102004062183

申请日：2004-12-23

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： KELLNER-WERDEHAUSEN UWE ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM ,  SCHNEIDER CARSTEN ,  SCHOLZ DETLEF

IPC: H01L29/74 ,  H01L23/48 ,  H03K17/72

Abstract: The arrangement has a p-doped base comprises a resistance zone (65) that extends in a vertical direction. The resistance zone comprises a specific electrical resistance. An external resistance (30) is provided outside of a semiconductor body, where the zone and external resistance comprises temperature coefficients. The coefficients of the external resistance are smaller than the coefficients of the zone in a specific temperature range. An independent claim is also included for a method for manufacturing a thyristor arrangement.

公开(公告)号：DE10048859B4

公开(公告)日：2005-12-15

申请号：DE10048859

申请日：2000-10-02

Applicant: INFINEON TECHNOLOGIES AG ,  EUPEC GMBH & CO KG

Inventor： SCHILLING OLIVER ,  SEIDELMANN HELMUT ,  SCHOLZ DETLEF ,  BAUER JOSEF ,  PORST ALFRED ,  BEUERMANN MAX ,  BARTHELMESS REINER

IPC: H01L23/051 ,  H01L23/48

Abstract: The pressure contact units (11, 12) are designed to produce an essentially symmetrical, uniform and/or homogeneous pressure distribution in the electronic component (20). This is especially so, in the regions (21a, 22a) between the contact surfaces (21, 22).

公开(公告)号：GB2421853A

公开(公告)日：2006-07-05

申请号：GB0526065

申请日：2005-12-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KELLNER-WERDEHAUSEN UWE ,  SCHOLZ DETLEF ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM ,  SCHNEIDER CARSTEN

IPC: H01L29/74

Abstract: The invention relates to a thyristor comprising a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction. The p-doped base (6) has a resistance zone (65) with a predetermined electrical resistance (R.int) extending in a lateral direction (r) perpendicular to the vertical direction. An external resistor (30, R.ext) is arranged or can be arranged outside the semiconductor body (1) is electrically connected in parallel with the resistance zone (65). The external resistor (30) has, in a specific temperature range, a temperature coefficient whose magnitude is less than the magnitude of the temperature coefficient of the resistance zone (65) in the specific temperature range. The invention furthermore relates to a method for producing such a thyristor.

公开(公告)号：DE10048859A1

公开(公告)日：2002-04-18

申请号：DE10048859

申请日：2000-10-02

Applicant: INFINEON TECHNOLOGIES AG ,  EUPEC GMBH & CO KG

Inventor： SCHILLING OLIVER ,  SEIDELMANN HELMUT ,  SCHOLZ DETLEF ,  BAUER JOSEF ,  PORST ALFRED ,  BEUERMANN MAX ,  BARTHELMESS REINER

IPC: H01L23/051 ,  H01L23/48

Abstract: The pressure contact units (11, 12) are designed to produce an essentially symmetrical, uniform and/or homogeneous pressure distribution in the electronic component (20). This is especially so, in the regions (21a, 22a) between the contact surfaces (21, 22).