公开(公告)号：DE102006001252B4

公开(公告)日：2012-01-26

申请号：DE102006001252

申请日：2006-01-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM DR ,  NIEDERNOSTHEIDE FRANZ-JOSEF DR ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER DR

IPC: H01L29/74 ,  H01L29/739

Abstract: Bipolares Leistungshalbleiterbauelement mit einem Halbleiterkörper (1), in dem in einer vertikalen Richtung (v) aufeinanderfolgend ein p-dotierter Emitter (8), eine n-dotierte Basis (7), eine p-dotierte Basis (6) und ein n-dotierter Hauptemitter (5) angeordnet sind, wobei der p-dotierte Emitter (8) eine Anzahl stark p-dotierter Zonen (82) mit einer lokal erhöhten p-Dotierung aufweist, die inselartig ausgebildet und vollständig von einer Zone (81) mit schwächerer p-Dotierung umgeben sind.

公开(公告)号：DE102008039743B4

公开(公告)日：2010-12-09

申请号：DE102008039743

申请日：2008-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR ,  PFIRSCH FRANK

IPC: H01L29/74 ,  H01L25/11 ,  H01L29/749 ,  H02M1/08

公开(公告)号：DE102008054094A1

公开(公告)日：2010-05-20

申请号：DE102008054094

申请日：2008-10-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER ,  SILBER DIETER ,  CHUKALURI ESWAR

IPC: H01L29/06 ,  H01L23/60 ,  H01L29/74

Abstract: The semiconductor element has a semiconductor body (1), in which a semiconductor zone is formed by a single cable type. The semiconductor zone has resistance structure (64) with two sections (21,81), where a third section is formed between the former and latter section. The third section (20) has a net dopant concentration (P), which is smaller than net dopant concentration (P plus) of the former section (21) and greater than net dopant concentration (P minus) of latter section (81).

公开(公告)号：DE102008051403A1

公开(公告)日：2010-05-12

申请号：DE102008051403

申请日：2008-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR

IPC: H01L29/74 ,  H01L21/332 ,  H01L27/06

Abstract: The thyristor arrangement has a semiconductor body (1), where a p-dopped emitter (8) and n-dopped basis (7) are arranged in a vertical direction (v) between a back side (14) and a front side (13). An ignition area (ZB) is provided, where an ignition stage (AG1) has n-dopped ignition stage emitter (51). An electric coupling element is formed as polysilizium layer and is arranged on a semiconductor element, where a section (101) of a semiconductor element is a section of a p-doped basis (6) and is arranged in the lateral direction between the ignition area and the ignition stage. An independent claim is included for a method for operating a thyristor arrangement.

公开(公告)号：DE102005023479A1

公开(公告)日：2006-11-23

申请号：DE102005023479

申请日：2005-05-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  SILBER DIETER

IPC: H01L29/74

Abstract: A thyristor with a semiconductor body comprises p-emitter (8), n-base (7), p-base (6) and n-emitter (5) vertically one above the other with inner (2) and outer (3) body regions. The p-emitter and n- and p- bases form a transistor with a laterally dependent amplification factor. This factor in the inner region has a minimum that is smaller than the factor in at least a neighboring part of the outer region.

公开(公告)号：GB2421853A

公开(公告)日：2006-07-05

申请号：GB0526065

申请日：2005-12-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KELLNER-WERDEHAUSEN UWE ,  SCHOLZ DETLEF ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM ,  SCHNEIDER CARSTEN

IPC: H01L29/74

Abstract: The invention relates to a thyristor comprising a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction. The p-doped base (6) has a resistance zone (65) with a predetermined electrical resistance (R.int) extending in a lateral direction (r) perpendicular to the vertical direction. An external resistor (30, R.ext) is arranged or can be arranged outside the semiconductor body (1) is electrically connected in parallel with the resistance zone (65). The external resistor (30) has, in a specific temperature range, a temperature coefficient whose magnitude is less than the magnitude of the temperature coefficient of the resistance zone (65) in the specific temperature range. The invention furthermore relates to a method for producing such a thyristor.

公开(公告)号：DE10250609B4

公开(公告)日：2005-12-29

申请号：DE10250609

申请日：2002-10-30

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  KELLNER-WERDEHAUSEN UWE ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L29/74

公开(公告)号：DE102004011234A1

公开(公告)日：2005-09-22

申请号：DE102004011234

申请日：2004-03-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KELLNER-WERDEHAUSEN UWE ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM

IPC: H01L21/265 ,  H01L21/332 ,  H01L29/74

Abstract: The method involves sequently arranging a p-doped emitter, an n-doped base, a p-doped base (6) and an n-doped main emitter in a semiconductor body. An ignition stage structure has an ignition stage that exhibits a n-doped auxiliary emitter (51). The emitter (51) forms a pn-junction with the p-doped base, such that particles are brought into the auxiliary emitter within a single step of irradiation.

公开(公告)号：DE102005023479B4

公开(公告)日：2011-06-09

申请号：DE102005023479

申请日：2005-05-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  SILBER DIETER

IPC: H01L29/74

公开(公告)号：DE102006000903B4

公开(公告)日：2010-12-09

申请号：DE102006000903

申请日：2006-01-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  BARTHELMESS REINER ,  KELLNER-WERDEHAUSEN UWE

IPC: H01L29/74 ,  H01L21/263 ,  H01L21/332