7.
    发明专利
    未知

    公开(公告)号:DE10319271A1

    公开(公告)日:2004-11-25

    申请号:DE10319271

    申请日:2003-04-29

    Abstract: A memory circuit arrangement and fabrication method thereof are presented in which the parts of the memory circuit arrangement are situated on two different substrates. An integrated memory cell array is situated on one substrate. An integrated control circuit that controls access to the memory cells is situated on the other (logic circuit) substrate. The control circuit controls sequences when reading, writing or erasing content of a memory cell. The logic circuit substrate also contains a CPU and encryption coprocessor. The memory circuit contains a sense amplifier, with the aid of which the memory state of a memory cell can be determined, and a decoding circuit that selects a word or bit line.

    9.
    发明专利
    未知

    公开(公告)号:DE502004008318D1

    公开(公告)日:2008-12-04

    申请号:DE502004008318

    申请日:2004-03-17

    Abstract: A memory circuit arrangement and fabrication method thereof are presented in which the parts of the memory circuit arrangement are situated on two different substrates. An integrated memory cell array is situated on one substrate. An integrated control circuit that controls access to the memory cells is situated on the other (logic circuit) substrate. The control circuit controls sequences when reading, writing or erasing content of a memory cell. The logic circuit substrate also contains a CPU and encryption coprocessor. The memory circuit contains a sense amplifier, with the aid of which the memory state of a memory cell can be determined, and a decoding circuit that selects a word or bit line.

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