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公开(公告)号：DE102005046133A1
公开(公告)日：2006-10-26
申请号：DE102005046133
申请日：2005-09-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SLESAZECK STEFAN , SIECK ALEXANDER
IPC: H01L21/336 , H01L29/78
Abstract: The present invention relates to a manufacturing method for a recessed channel array transistor and a corresponding recessed channel array transistor. In one embodiment, the present invention uses a self-adjusting spacer on the substrate surface to provide the required distance between the gate and the source/drain regions. Thus, the requirements regarding the tolerances of the lithography in the gate contact plane are diminished.
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