公开(公告)号：DE10135805A1

公开(公告)日：2003-02-13

申请号：DE10135805

申请日：2001-07-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ASAM WILHELM ,  FAZEKAS JOSEF ,  HAGEN JOCHEN VON ,  MARTIN ANDREAS ,  SMEETS DAVID

IPC: G01R31/28 ,  G01R31/3173 ,  H01L23/544 ,  H01L21/66 ,  H01L23/58 ,  H01L21/68

Abstract: Device for measuring the reliability of integrated semiconductor elements has a support substrate (1) for receipt of the integrated semiconductor element (HBE), a heating element (HE) for heating the semiconductor element and a temperature sensor (TS) for measuring its temperature. The temperature sensor is formed at least partially from an interference element of the semiconductor element itself. An Independent claim is made for a method for measuring the reliability of an integrated semiconductor circuit wherein a measurement mode is implemented and the element heated, followed by a stress mode wherein the semiconductor element is heated and stressed simultaneously and the failure point of the circuit is determined dependent on the applied temperature.