-
公开(公告)号:AT200939T
公开(公告)日:2001-05-15
申请号:AT93102667
申请日:1993-02-19
Applicant: INFINEON TECHNOLOGIES AG
IPC: G11C11/413 , G11C11/401 , G11C29/00 , G11C29/04 , G11C5/00 , G06F11/20
Abstract: The column redundancy device for a memory has a memory blocks (BK1... N), with memory cells arranged in x rows and y columns, redundant memory cells, which are arranged in b rows and c columns, a column decoder (CDEC) with c redundant column decoders (RCD1 ... N), and d coding elements (CF1,1 ... CFP,4). Each column decoder (RCD1 ... 4) is assigned to one of the c redundant columns of each memory block (BK1 ... N). Each of the d coding elements (CF1,1 ... CFP,4) includes means of decoding addresses, and can thus be assigned to any memory block (BK1... N).