公开(公告)号：WO0241403A2

公开(公告)日：2002-05-23

申请号：PCT/DE0104005

申请日：2001-10-19

Applicant: INFINEON TECHNOLOGIES AG ,  SOMMER PETER ,  TIHANY JENOE

Inventor： SOMMER PETER ,  TIHANY JENOE

IPC: H01L21/8242 ,  H01L29/06 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L29/786 ,  H01L27/088 ,  H01L27/108 ,  H01L29/08

CPC classification number: H01L29/7812 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10888 ,  H01L29/0653 ,  H01L29/41741 ,  H01L29/456 ,  H01L29/7824 ,  H01L29/7827 ,  H01L29/78642

Abstract: The invention relates to an MOS low-voltage vertical transistor (VMT), in which the rear drain electrode (12) is connected to a drain region (7) that extends vertically, by means of a plug (11) in an isolation layer (9).

Abstract translation: 本发明涉及一种MOS低电压垂直晶体管（VMT），其中，所述后漏电极（12）是在绝缘层（9）具有一个垂直延伸漏区的插头（11）（7）。

公开(公告)号：DE10255830B4

公开(公告)日：2006-02-16

申请号：DE10255830

申请日：2002-11-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  SOMMER PETER

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/78

公开(公告)号：DE10108046A1

公开(公告)日：2002-09-12

申请号：DE10108046

申请日：2001-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  SOMMER PETER

IPC: H01L29/06 ,  H01L29/78

Abstract: The device has two electrodes (S,D) arranged on a semiconductor body. in which a drift zone (3) with embedded compensation regions (6) of opposite conductivity type. An active zone (4) is connected to one of the two electrodes. The compensation regions (6) are connected via a resistance to the active zone (4) The resistance may comprise a JFET, and FET. The compensation regions may be connected to each other.

公开(公告)号：DE19946167A1

公开(公告)日：2001-04-12

申请号：DE19946167

申请日：1999-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  SOMMER PETER

IPC: H01L27/088 ,  H01L27/085

Abstract: An integrated semiconductor circuit arrangement includes a substrate (2) of a first conductivity type (p), on which are arranged at least one first zone (4) of a second conductivity type (n) for connection of a first supply potential (+U), and at least one second zone (6) of the second conductivity type (n) for connection of a second reference potential (A). A third zone (8) is arranged on the substrate (2) and is of the second conductivity type (n) for connection to an output terminal (A). A fourth zone (10) of the first conductivity type (p) is arranged between the first (4) and third (8) zones on the substrate, and a fifth zone (12) of the first conductivity type (p) is arranged on the substrate between the second (6) and the third (8) zones. Control electrodes (16,20) are separated from the fourth and fifth zones by insulation layers (18,22) and at least one control electrode (16) is arranged over the fourth zone (10) and at least one control electrode (20) is arranged over the fifth zone (12).

公开(公告)号：DE10001869B4

公开(公告)日：2006-10-26

申请号：DE10001869

申请日：2000-01-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SOMMER PETER ,  TIHANYI JENOE

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/41

公开(公告)号：DE19630051B4

公开(公告)日：2004-09-16

申请号：DE19630051

申请日：1996-07-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  SOMMER PETER

IPC: H03K17/12 ,  H03K17/687

公开(公告)号：DE59510918D1

公开(公告)日：2004-08-12

申请号：DE59510918

申请日：1995-07-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GRAF DR ING ,  SOMMER PETER ,  HUBER PETER ,  SCHLOEGEL XAVER

IPC: H01L23/12 ,  H01L23/495 ,  H01L25/00

Abstract: The semiconductor component has a number of sheet metal mounting plates (30, 31, 32) contained within the insulating housing (4) and lying in a common plane. The mounting plates support the semiconductor switch elements (33-36) of a rectifier bridge, which are electrically coupled to the respective mounting plates. Pref., the housing contains 3 mounting plates, each formed integral with the terminal leads for the respective semicondcutor, provided by a single leadframe. The housing is pref. rectangular, with the terminal leads extending from the longitudinal housing sides.

公开(公告)号：DE10052004C1

公开(公告)日：2002-02-28

申请号：DE10052004

申请日：2000-10-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  SOMMER PETER

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/78

Abstract: The transistor has a semiconductor body (10) provided with 2 successive layers (12,14) of a first conductivity type, the second layer having a terminal zone (30A,30B,30C) contacted at the surface (102) of the semiconductor body, enclosed by a channel zone (40A,40B,40C) of opposite conductivity type and a compensation zone (60,62,64,65,66) of the second conductivity type. A second terminal zone (20) of the first conductivity type is contacted at the surface of the semiconductor body.

公开(公告)号：DE10001869A1

公开(公告)日：2001-07-26

申请号：DE10001869

申请日：2000-01-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SOMMER PETER ,  TIHANYI JENOE

IPC: H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/41 ,  H01L29/78

Abstract: The component has first and second conducting zones (10,32) of a first conductor type, a blocking zone (20) of a second conductor type between the first and second zones and a control electrode for producing a conducting channel in the blocking zone by applying a drive potential. The first conducting zone has a strongly doped zone (12) for connecting a connecting electrode and a more weakly doped zone (14) enclosing the strongly doped zone.

公开(公告)号：DE10108046B4

公开(公告)日：2006-10-19

申请号：DE10108046

申请日：2001-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  SOMMER PETER

IPC: H01L29/06 ,  H01L29/78