公开(公告)号：DE59812312D1

公开(公告)日：2005-01-05

申请号：DE59812312

申请日：1998-01-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STECHER DR ,  PERI HERMANN

IPC: H01L21/033 ,  H01L21/336 ,  H01L21/60 ,  H01L21/8234 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78

Abstract: In the production of a semiconductor body having a first self-aligned structure region (A) and a remaining second region (B), involving applying and structuring an oxide layer (22) on the body front face and then applying a semiconductor layer (24) and an insulation layer (26), the process further comprises: (a) structuring the insulation layer (26), by photo-technology and subsequent etching, to remove the layer entirely from the second region (B) while leaving it on at least part of the first region (A); and (b) employing photo-technology and subsequent etching to structure the semiconductor layer (24) and the portions consisting of the insulation layer (26) and the semiconductor layer (24). Preferably, a number of DMOSFETs are integrated in the first region (A).