公开(公告)号：DE10030695C1

公开(公告)日：2002-01-24

申请号：DE10030695

申请日：2000-06-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STRUCK THOMAS ,  RUHL GUENTHER ,  VERBEEK MARTIN

IPC: G03F1/00 ,  G06T7/00 ,  G03F9/00

Abstract: A method and a device for analyzing structures of a photomask are described. In a first method step, at least one trench is created in the photomask, so that at least one lateral limitation of the trench forms a section through the structures to be analyzed. Then, the structures to be analyzed are scanned by scanning beams, which are guided through the trench on its lateral limitation.

公开(公告)号：DE19944474C2

公开(公告)日：2001-10-31

申请号：DE19944474

申请日：1999-09-16

Applicant: INFINEON TECHNOLOGIES AG ,  LEICA MICROSYSTEMS

Inventor： STACH GERD ,  STRUCK THOMAS

IPC: G03F1/00 ,  H01L21/027 ,  G01B11/00 ,  G03F1/16

公开(公告)号：DE10124124C1

公开(公告)日：2003-02-20

申请号：DE10124124

申请日：2001-05-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STRUCK THOMAS ,  SCHAETZ THOMAS

IPC: G03F1/64 ,  G03F1/14

Abstract: The masking device (10) has a mask (12) made of a mask material, provided with a lithography structure and a pellicle device (14) with a pellicle layer (20) and a pellicle frame (16) of a frame material, attached to the mask. The thermal expansion coefficient of the frame material is not more than 20 times the thermal expansion coefficient of the mask material and preferably not more than twice that of the latter. An Independent claim for a lithography device is also included.

公开(公告)号：DE19944474A1

公开(公告)日：2001-05-31

申请号：DE19944474

申请日：1999-09-16

Applicant: INFINEON TECHNOLOGIES AG ,  LEICA MICROSYSTEMS

Inventor： STACH GERD ,  STRUCK THOMAS

IPC: G03F1/00 ,  H01L21/027 ,  G01R11/00 ,  G03F1/16