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公开(公告)号：NL1024355A1
公开(公告)日：2004-03-25
申请号：NL1024355
申请日：2003-09-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LUDWIG RALF , VERBEEK MARTIN
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公开(公告)号：DE10030695C1
公开(公告)日：2002-01-24
申请号：DE10030695
申请日：2000-06-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor： STRUCK THOMAS , RUHL GUENTHER , VERBEEK MARTIN
Abstract: A method and a device for analyzing structures of a photomask are described. In a first method step, at least one trench is created in the photomask, so that at least one lateral limitation of the trench forms a section through the structures to be analyzed. Then, the structures to be analyzed are scanned by scanning beams, which are guided through the trench on its lateral limitation.
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公开(公告)号：DE102005050324B4
公开(公告)日：2010-02-18
申请号：DE102005050324
申请日：2005-10-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BRAUN CHRISTOPH , KNOLL BERNHARD , VERBEEK MARTIN , WEBER WERNER
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公开(公告)号：DE102005050324A1
公开(公告)日：2007-04-26
申请号：DE102005050324
申请日：2005-10-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BRAUN CHRISTOPH , KNOLL BERNHARD , VERBEEK MARTIN , WEBER WERNER
Abstract: Rectifier has conductive substrates (60,61) of different types with diodes (63,64 ) in a series connection having the anode and cathodes connected. Connection are made for the AC input (67) and the DC outputs (66). A metal layer (65) covers the second substrate. The substrates are of silicon, gallenium arsenide or indium phosphide.
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公开(公告)号：DE102005004070B3
公开(公告)日：2006-08-03
申请号：DE102005004070
申请日：2005-01-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： NOELSCHER CHRISTOPH , VERBEEK MARTIN , CRELL CHRISTIAN
IPC: G03F1/00
Abstract: The method involves removing a defective material (40) and an absorbing material (3) of a lithographic mask in a processing zone by a focused ion beam. The mask is subjected to a cleaning process after the removal of the defective material. An absorbing material is applied in an outer region, which is dependent on a portion of the processing zone, to form a transmitting region (1) having a desired phase difference on the mask. An independent claim is also included for a lithographic mask with a transmitting region.
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Patent Agency Ranking
公开(公告)号：DE10244399B4
公开(公告)日：2006-08-03
申请号：DE10244399
申请日：2002-09-24
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LUDWIG RALF , VERBEEK MARTIN
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公开(公告)号：DE10258371A1
公开(公告)日：2004-07-08
申请号：DE10258371
申请日：2002-12-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor： KOEHLE RODERICK , DETTMANN WOLFGANG , VERBEEK MARTIN
IPC: G03F1/00
Abstract: Method for inspection of periodic structures on a lithography mask using a microscope with adjustable illumination and a drive for 2D movement of a mechanical stage on which the mask is placed under control of a computer. Position, size and pitch specification of the mask are stored by means of a first image calibration of each array structure of selected locations on the lithography mask, calculation of Fourier coefficients and calculation of a difference image to generate a defect indicating display.
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公开(公告)号：DE10131187A1
公开(公告)日：2003-01-30
申请号：DE10131187
申请日：2001-06-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： FRANKE THORSTEN , VERBEEK MARTIN , SEMMLER ARMIN , HAFFNER HENNING
IPC: G03F1/00
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公开(公告)号：NL1025016C2
公开(公告)日：2008-06-17
申请号：NL1025016
申请日：2003-12-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor： DETTMANN WOLFGANG , KOEHLE RODERICK , VERBEEK MARTIN
IPC: G03F1/00
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公开(公告)号：NL1024355C2
公开(公告)日：2008-02-14
申请号：NL1024355
申请日：2003-09-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor： LUDWIG RALF , VERBEEK MARTIN
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