公开(公告)号：DE10010820C1

公开(公告)日：2001-09-13

申请号：DE10010820

申请日：2000-02-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRAEMER HANS ,  TAUBERT MATHIAS ,  LOIBNEGGER GERNOT

IPC: B24C3/32 ,  H01L21/304 ,  H01L21/306 ,  B09B3/00 ,  B24C1/00

Abstract: Regenerating semiconductor wafers comprises removing previously applied layers on the wafer, by wet blasting using a blast material, finely distributed in water and having a predetermined and uniform granularity. Silicon dioxide, corundum and their mixtures are used as the blast material. The material has a granularity of less than 100 microns m. During blasting, the water pressure is set between 2-5 bars. Further, fine cleaning of the wafer using hydrogen fluoride and silicon carbide (SC1 and SC2), is also performed.