公开(公告)号：DE10137113A1

公开(公告)日：2003-02-27

申请号：DE10137113

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRAEMER HANS ,  GEIDL JOCHEN ,  HERRLICH LUTZ ,  GOEHLER JENS ,  MIMIETZ STEFFEN ,  GROBITZSCH ELISABETH ,  PATAKI ANETT

IPC: H01L21/302

Abstract: Regenerating semiconductor wafers mostly made from silicon comprises determining the extent of damage on the main surfaces of the wafer; grinding and chemical-mechanical polishing the surfaces; and wet chemical cleaning. Preferred Features: The grinding is carried out in the wet state using a diamond abrasive disk. Polishing is carried out in the presence of a polishing solution made from 0.26-normal tetramethylammonium hydroxide solution, 12 % silicon dioxide solution and 8 % aluminum sulfate solution. The wet chemical cleaning is carried out in the presence of 10-50 % hydrofluoric acid.

公开(公告)号：DE10010820C1

公开(公告)日：2001-09-13

申请号：DE10010820

申请日：2000-02-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRAEMER HANS ,  TAUBERT MATHIAS ,  LOIBNEGGER GERNOT

IPC: B24C3/32 ,  H01L21/304 ,  H01L21/306 ,  B09B3/00 ,  B24C1/00

Abstract: Regenerating semiconductor wafers comprises removing previously applied layers on the wafer, by wet blasting using a blast material, finely distributed in water and having a predetermined and uniform granularity. Silicon dioxide, corundum and their mixtures are used as the blast material. The material has a granularity of less than 100 microns m. During blasting, the water pressure is set between 2-5 bars. Further, fine cleaning of the wafer using hydrogen fluoride and silicon carbide (SC1 and SC2), is also performed.