公开(公告)号：DE19957540B4

公开(公告)日：2005-07-07

申请号：DE19957540

申请日：1999-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RICHTER FRANK ,  TEMMPLER DIETER

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L21/266 ,  H01L21/8242

Abstract: A simple method for fabricating a field-effect transistor having an anti-punch-through implantation region is provided. After the anti-punch-through implantation region is formed, a semiconductor substrate is locally oxidized by using a mask layer in order to form a gate insulation layer. The method allows the fabrication of field-effect transistors having improved short-channel properties.

公开(公告)号：DE19957540A1

公开(公告)日：2001-06-13

申请号：DE19957540

申请日：1999-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RICHTER FRANK ,  TEMMPLER DIETER

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L21/266 ,  H01L21/8242

Abstract: A simple method for fabricating a field-effect transistor having an anti-punch-through implantation region is provided. After the anti-punch-through implantation region is formed, a semiconductor substrate is locally oxidized by using a mask layer in order to form a gate insulation layer. The method allows the fabrication of field-effect transistors having improved short-channel properties.