公开(公告)号：DE10346312A1

公开(公告)日：2005-05-04

申请号：DE10346312

申请日：2003-10-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  THIHANYI JENOE

IPC: H01L21/761 ,  H01L29/41 ,  H01L29/78 ,  H01L21/76 ,  H01L27/06

Abstract: The semiconductor component (1'), with several semiconductor function elements connected in series or parallel, has 2 superimposed semiconductor layers (2,3) with opposite dopings, an insulation structure (4,5) formed in the upper semiconductor layer, for dividing it into relatively isolated semiconductor regions (6,7,8) for respective function elements, e.g. metal oxide silicon field effect transistors. The insulation structure is at least partially formed of a metal/silicide (15).