2.
    发明专利
    未知

    公开(公告)号:DE59912177D1

    公开(公告)日:2005-07-21

    申请号:DE59912177

    申请日:1999-08-05

    Abstract: A combined precharging and homogenizing circuit for a semiconductor memory configuration made up of a memory cell array having a multiplicity of bit line pairs. The combined precharging and homogenizing circuit containing a first and a second field-effect precharging transistor and a homogenizing transistor connected in series between the two precharging transistors. Gates of the two precharging transistors and of the homogenizing transistor are connected together to form a common gate. Sources of the precharging transistors are connected together to form a common source. A drain of the first precharging transistor and a drain of the homogenizing transistor are connected together to form a common drain and the source of the homogenizing transistor and the drain of the second precharging transistor are connected together to form a common source/drain. In the combined precharging and homogenizing circuit, the invention provides that the common gate is angled and is configured rotated through about 45 DEG in relation to a longitudinal direction of the bit lines. In addition, the common drain and the common source/drain are drawn forward beyond the common gate defining protruding regions, and that bit line contacts are accommodated in the protruding regions.

    4.
    发明专利
    未知

    公开(公告)号:DE10209073A1

    公开(公告)日:2003-09-18

    申请号:DE10209073

    申请日:2002-02-28

    Abstract: A semiconductor chip has standard cells which are disposed in a plurality of mutually adjacent rows, wiring channels are disposed between the rows and at at least one location along at least one wiring channel, the width of the wiring channel determined by a prescribed unambiguous and variable assignment specification. The width of the wiring channels can thus be varied in a flexible manner, so that a circuit can be fabricated in a space-saving manner.

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