公开(公告)号：DE102008004682A1

公开(公告)日：2009-09-10

申请号：DE102008004682

申请日：2008-01-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEYERS ACHIM ,  NELLE PETER

IPC: H01L21/761 ,  H01L21/74 ,  H01L29/06

Abstract: The arrangement has a protection structure (20), which exhibits a semiconductor zone (21) doped higher than a base doping of a semiconductor substrate (103) designed as epitaxial layer, where the semiconductor zone extends till under a component zone i.e. drain zone (11), of a metal oxide semiconductor (MOS)-transistor, in a lateral direction. A connecting zone (22) extends from a front side (101) of a semiconductor body (100) to the zone. Another semiconductor zone (24) of a conducting type is arranged in the substrate and is attached at the connecting zone in an electrical conducting manner. The semiconductor zone (21) is distanced to the front side of the semiconductor body.