公开(公告)号：AT549747T

公开(公告)日：2012-03-15

申请号：AT99934464

申请日：1999-05-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SILBER DIETER ,  WONDRAK WOLFGANG ,  PLIKAT ROBERT

IPC: H01L29/739 ,  H01L21/20 ,  H01L21/329 ,  H01L21/331 ,  H01L21/332 ,  H01L21/762 ,  H01L27/12 ,  H01L29/06 ,  H01L29/40 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H01L29/868

Abstract: The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.