公开(公告)号：DE10159851A1

公开(公告)日：2003-06-26

申请号：DE10159851

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG ,  SEMIKRON ELEKTRONIK GMBH

Inventor： SILBER DIETER ,  GUTSMANN BERND ,  MOURICK PAUL ,  MILLER GERHARD

IPC: H01L23/48 ,  H01L23/66 ,  H01L25/07 ,  H02M7/00 ,  H01L23/58

Abstract: The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.

公开(公告)号：DE102008039742B4

公开(公告)日：2010-11-25

申请号：DE102008039742

申请日：2008-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  SILBER DIETER ,  BARTHELMESS REINER ,  CHUKALURI ESWAR KUMAR

IPC: H01L29/74

公开(公告)号：DE102008051403B4

公开(公告)日：2010-12-16

申请号：DE102008051403

申请日：2008-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR

IPC: H01L29/74 ,  H01L21/332 ,  H01L27/06

公开(公告)号：AT386339T

公开(公告)日：2008-03-15

申请号：AT99962054

申请日：1999-11-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SILBER DIETER ,  PLIKAT ROBERT ,  KAPELS HOLGER

IPC: H01L29/06 ,  H01L21/20 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

公开(公告)号：AT549747T

公开(公告)日：2012-03-15

申请号：AT99934464

申请日：1999-05-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SILBER DIETER ,  WONDRAK WOLFGANG ,  PLIKAT ROBERT

IPC: H01L29/739 ,  H01L21/20 ,  H01L21/329 ,  H01L21/331 ,  H01L21/332 ,  H01L21/762 ,  H01L27/12 ,  H01L29/06 ,  H01L29/40 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H01L29/868

Abstract: The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.

公开(公告)号：DE102005023479B4

公开(公告)日：2011-06-09

申请号：DE102005023479

申请日：2005-05-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  SILBER DIETER

IPC: H01L29/74

公开(公告)号：DE102008039743A1

公开(公告)日：2010-03-04

申请号：DE102008039743

申请日：2008-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR ,  PFIRSCH FRANK

IPC: H01L29/74 ,  H01L25/11

Abstract: The thyristor (100) has a p-doped emitter (8), an n-doped base (7), a P-doped base (6) and an n-doped main emitter (5) arranged in a vertical direction (v) in a semiconductor body (1). An ignition stage structure is arranged between an ignition device (BOD) and the main emitter and comprises an ignition stage (AG3) with an n-doped ignition stage emitter (53). The ignition stage has a conductor structure (43) with conductor segments (M3), which are distanced from each other. The conductor segments electrically contact the n-doped ignition stage emitter and the P-doped base. An independent claim is also included for a switch arrangement including a control connecting device.

公开(公告)号：DE102008039742A1

公开(公告)日：2010-03-04

申请号：DE102008039742

申请日：2008-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  SILBER DIETER ,  BARTHELMESS REINER ,  CHUKALURI ESWAR KUMAR

IPC: H01L29/74

Abstract: The thyristor has a semiconductor body (1), where an ignition stage area (ZS) with ignition stages (ZS1,ZS2,ZS3) and a main cathode area (HB) are arranged between an ignition area (Z) and a lateral edge of the semiconductor body in a lateral direction (r1) going out from the ignition area. The ignition stages are electrically coupled with the succeeding ignition stages or with the main cathode area by non-ohmic impedance (Z-fb). The non-ohmic impedance is connected between two successive ignition stages on the semiconductor body in the lateral direction. An independent claim is included for a circuit configuration, which has a housing.

公开(公告)号：DE59914652D1

公开(公告)日：2008-03-27

申请号：DE59914652

申请日：1999-11-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SILBER DIETER ,  PLIKAT ROBERT ,  KAPELS HOLGER

IPC: H01L29/06 ,  H01L21/20 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

公开(公告)号：DE102008039743B4

公开(公告)日：2010-12-09

申请号：DE102008039743

申请日：2008-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR ,  PFIRSCH FRANK

IPC: H01L29/74 ,  H01L25/11 ,  H01L29/749 ,  H02M1/08