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    CIRCUIT ARRANGEMENT COMPRISING CASCADED FIELD EFFECT TRANSISTORS
    1.
    发明申请
    CIRCUIT ARRANGEMENT COMPRISING CASCADED FIELD EFFECT TRANSISTORS 审中-公开
    电路级联场效应晶体管

    公开(公告)号：WO02093734A2

    公开(公告)日：2002-11-21

    申请号：PCT/EP0203867

    申请日：2002-04-18

    Applicant: INFINEON TECHNOLOGIES AG ,  ZIMMERMANN WALTER

    Inventor： ZIMMERMANN WALTER

    IPC: H03G1/00 ,  H03F1/00

    CPC classification number: H03G1/0029

    Abstract: The invention relates to a circuit arrangement based on the lengthening of the control trace by means of a voltage divider R1 and R2, which supplies a split control voltage in the ratio R1 /(R1 + R2) to the gate-electrode of the second working transistor AT2. Said lengthening however only relates to the steep part of the control trace. Accordingly, the invention is provided with first and second switching units in order to correctly apply the inception voltage and to dramatically shorten and correctly position the lengthened flat upper part of the control characteristic curve. In addition leakages from the inception voltages are collected or compensated, instead of being multiplied by the divider circuits.

    Abstract translation: 本发明的电路布置基于扩展控制轨道的由分压器R1和R2，其在将所述第二操作晶体管AT2用品的栅电极的比值RL /器（R1 + R2）的控制电压。 但这个扩展应该只适用于标准轨距的陡峭部分。 因此，第一和第二电路单元被提供，以设定阈值电压，并且大大缩短控制特性的右细长扁平上部和正确定位。 此外，在阈值电压的变化是可能拦截或补偿，而不是乘以除法器电路。

    2.
    发明专利
    未知

    公开(公告)号：DE102004030039B3

    公开(公告)日：2005-12-22

    申请号：DE102004030039

    申请日：2004-06-22

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ZIMMERMANN WALTER ,  KRUG ERWIN

    IPC: H03D7/12 ,  H04B1/26 ,  H04N5/265

    Abstract: A mixer includes two transistor circuits, two control inputs, two RF inputs and two IF outputs, wherein, for switch-support, there are provided positive feedback elements and impedance elements, by which intermodulation strength, stability and noise performance of the mixer circuit are improved.

    4.
    发明专利
    未知

    公开(公告)号：DE10006505B4

    公开(公告)日：2005-02-24

    申请号：DE10006505

    申请日：2000-02-15

    Applicant: INFINEON TECHNOLOGIES AG ,  EUPEC GMBH & CO KG

    Inventor： SCHILLING OLIVER ,  ZIMMERMANN WALTER

    IPC: H01L23/538 ,  H01L25/07 ,  H01L29/739 ,  H01L23/64 ,  H01L23/492

    Abstract: The power semiconductor module has a number of parallel IGBT-chips (2,3) with their emitter conductor paths (4), base conductor paths (5) and collector conductor paths (1) at least partially provided in common, with a slit (12) provided in one of these conductor paths. The conductor paths are applied to a ceramics substrate (10), with the slit provided simultaneous with the formation of the conductor paths, or provided subsequently via an etching process.

    7.
    发明专利
    未知

    公开(公告)号：DE50111852D1

    公开(公告)日：2007-02-22

    申请号：DE50111852

    申请日：2001-04-04

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LOSEHAND REINHARD ,  PEICHL RAIMUND ,  ZIMMERMANN WALTER

    IPC: H01P1/15 ,  H03H5/12 ,  H03B5/08 ,  H03B5/12 ,  H03H5/00 ,  H03M1/00 ,  H03M1/78

    Abstract: The integrated component has an oscillation circuit with a capacitance value determined via a tuning diode, a second compensation diode used for compensating the deviation in the resonance frequency of the oscillation circuit, resulting from the manufacturing tolerances. The compensation diode is controlled by a compensation voltage obtained from a reference voltage via a D/A converter (12) in dependence on a digital value held in a memory (17).

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