1.
    发明专利
    未知

    公开(公告)号:DE10232386A1

    公开(公告)日:2004-01-29

    申请号:DE10232386

    申请日:2002-07-17

    Abstract: To store information in a ferroelectric material, a sample probe is used to bring about mechanical action on individual domains and thereby to cause a reversal of polarization in the individual domains, with electrodes situated below the ferroelectric material being able to have a bias applied to them to stabilize the change/reversal of polarization. The reversal of polarization causes an alteration in the surface topography of the ferroelectric material, and this alteration can be used to read the information. The stored information is therefore obtained by ascertaining the surface topography of the ferroelectric material. The information is written and read using an AFM tip, with the tip being able to be operated in contact or tapping mode for the purpose of writing, and additionally in noncontact mode for the purpose of reading.

    METHOD FOR STORING AND/OR READING INFORMATION IN/OUT OF A FERROELECTRIC MATERIAL

    公开(公告)号:AU2003246703A1

    公开(公告)日:2004-02-02

    申请号:AU2003246703

    申请日:2003-07-15

    Abstract: To store information in a ferroelectric material, a sample probe is used to bring about mechanical action on individual domains and thereby to cause a reversal of polarization in the individual domains, with electrodes situated below the ferroelectric material being able to have a bias applied to them to stabilize the change/reversal of polarization. The reversal of polarization causes an alteration in the surface topography of the ferroelectric material, and this alteration can be used to read the information. The stored information is therefore obtained by ascertaining the surface topography of the ferroelectric material. The information is written and read using an AFM tip, with the tip being able to be operated in contact or tapping mode for the purpose of writing, and additionally in noncontact mode for the purpose of reading.

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