公开(公告)号：DE102004005385A1

公开(公告)日：2005-10-20

申请号：DE102004005385

申请日：2004-02-03

Applicant: INFINEON TECHNOLOGIES AG ,  ASM INT

Inventor： GSCHWANDTNER ALEXANDER ,  KNAPP MARTIN

IPC: C23C16/30 ,  C23C16/40 ,  C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  C07F7/00

Abstract: The present invention relates to the use of a highly concentrated solution of one or more hafnium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers. The present invention relates in particular to the use of a 30 to 90% strength by weight solution of one or more hafnium alkoxides for producing hafnium oxide and hafnium oxynitride layers for CVD or ALD methods. In addition, the invention relates to a process for the production of a hafnium oxide and hafnium oxynitride layer on an article to be coated, and a hafnium alkoxide solution which contains 30 to 90% by weight of one or more hafnium alkoxides. In a further embodiment of the invention, hafnium is replaced by zirconium in said compounds.