公开(公告)号：JP2000284466A

公开(公告)日：2000-10-13

申请号：JP2000069197

申请日：2000-03-13

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： CARPI ENIO ,  BUTT SHAHID

IPC: G03F1/00 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a mask pattern capable of increasing the depth of focus and exposure latitude while maintaining or improving the resolution for the characteristics desired to be imaged. SOLUTION: The surface of a substrate 18 is provided with plural elongated structures 13 which are arranged nearly parallel to each other and plural projecting parts 14 below the resolution which extend transversely into the spaces between these elongated structures from the elongated structures. The plural projecting parts 14 have nearly the same sizes in the direction parallel to the elongated structures 13. The plural projecting parts 14 are periodically arranged apart spaced intervals in the direction parallel to the elongated structures 13. The elongated structures 13 and the projecting parts 14 are formed of energy absorption materials containing at least one among chromium, carbon and molybdenum.