公开(公告)号：JP2000294747A

公开(公告)日：2000-10-20

申请号：JP2000094512

申请日：2000-03-30

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： GRAIMANN CHRISTOF ,  MAZURE CARLOS A ,  DIESELDORFF CHRISTIAN ,  SCHULZ ANGELIKA

IPC: H01L27/108 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To prevent dislocation owing to a stack defect and the occurrence of stress by lining a trench formed in a semiconductor substrate in a dielectric layer, installing a nitride layer on oxide formed on an upper part and filling a collar with a trench semiconductor material. SOLUTION: DRAM formed on a semiconductor substrate 33 doped by epitaxial growth has a transistor 36 and a trench capacitor 32 accumulating data. The trench capacitor 32 is provided with a trench cell 21 and is provided with a thick oxide isolation collar 24 formed at a periphery along an upper sidewall. A thin nitride liner 25 is arranged on the inner sidewall of the oxide collar 24. A buried layer is doped in high density and is formed in a substrate 33 by selective ion implantation. The buried layer and the channel area 28 of the transistor 36 are separated by a depth line 43. The transistor 36 is formed of a drain well 23, a source well 29 and a gate 35.