公开(公告)号：WO0197265A2

公开(公告)日：2001-12-20

申请号：PCT/US0117442

申请日：2001-05-31

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： TEWS HELMUT HORST ,  LEE BRIAN S ,  HOEPFNER JOACHIM

IPC: H01L21/02 ,  H01L21/223 ,  H01L21/8242 ,  H01L21/32 ,  H01L27/108

CPC classification number: H01L27/1087 ,  H01L21/2236 ,  H01L28/84

Abstract: A method of doping trench sidewall and hemispherical-grained silicon in deep trench cells to increase surface area and storage capacitance while avoiding deformation of trenches and hemispherical-grained silicon, comprising: a) Etching a deep trench structure by reactive ion etching; b) Forming a LOCOS collar in an upper portion of the trench over a conformal layer of a silicon containing material, the collar leaving a lower portion of the trench exposed; c) Depositing a film of hemispherical-grained silicon (HSG -Si) at sidewalls of the deep trench; d) Plasma doping the hemispherical-grained silicon; and e) Depositing a node dielectric and filling the trench with polysilicon.

Abstract translation: 一种在深沟槽电池中掺杂沟槽侧壁和半球晶硅的方法，以增加表面积和存储电容，同时避免沟槽和半球形硅的变形，包括：a）通过反应离子蚀刻蚀刻深沟槽结构; b）在含硅材料的保形层上的沟槽的上部形成LOCOS环，所述套环留下暴露的沟槽的下部; c）在深沟槽的侧壁处沉积半球形硅（HSG-Si）的膜; d）等离子体掺杂半球形硅; 以及e）沉积节点电介质并用多晶硅填充沟槽。