公开(公告)号：WO0210480A3

公开(公告)日：2002-10-31

申请号：PCT/US0123905

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： RAMACHANDRAN RAVIKUMAR ,  PENNER KLAUS ,  NICHTERWITZ MARION ,  NITSCHKE CHRISTIANE ,  KRAUSE HOLGE

IPC: C09K13/08 ,  C23F1/18 ,  C23F1/20 ,  G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3213 ,  C23G1/00 ,  G01N1/00

CPC classification number: H01L21/02071 ,  C09K13/08 ,  C11D3/3942 ,  C11D3/3947 ,  C11D7/08 ,  C11D11/0047 ,  C23F1/00 ,  C23F1/18 ,  C23F1/20 ,  G03F7/423 ,  G03F7/426 ,  H01L21/02052 ,  H01L21/02063

Abstract: A process for providing an aqueous back-end-of-line (BEOL) clean with feed-back control to monitor the active component of HF in the clean, for a wiring/interconnect of a reactive ion etched semiconductor device, comprising: subjecting the reactive ion etched semiconductor device to a post metal RIE clean using an etchant composition comprising about 0.01 to about 15 percent by weight of sulfuric acid; about 0.1 to about 100 ppm of a fluoride containing compound; and a member selected from the group consisting of about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to about 30 ppm of ozone, comprising: a) mixing water, sulfuric acid and hydrogen peroxide in a mixing tank; b) mixing HF directly into the mixing tank or adding HF into a separate vessel for wafer processing, either before, during or after the mixture water, sulfuric acid and hydrogen peroxide as a mixture is transported to the separate tank for wafer processing; c) taking a sample comprising HR from the mixing tank or HF from the wafer processing tank and sending the sample through a feedback loop; d) comprising the sample to a standard dilute solution of HF to obtain a value of HF concentration in the sample; e) inputting the value to a tank tool recipe control to cause any needed adjustment in concentration of HF to a predetermined range, either in the mixing tank or the wafer processing vessel; and f) subjecting the wiring/interconnect of the semiconductor device to etching by the etchant composition to remove sidewall polymer, polymer rails and via residue without etching conductive materials during removal of sidewall polymer, polymer rails, and via residue.

Abstract translation: 一种用于反馈控制以提供水性生产线后端（BEOL）清洁的方法，用于监视清洁过程中HF的活性成分，用于反应离子蚀刻半导体器件的布线/互连，包括：使所述 使用包含约0.01重量％至约15重量％的硫酸的蚀刻剂组合物对所述反应离子蚀刻的半导体器件进行后金属RIE清洁; 约0.1至约100ppm的含氟化合物; 和选自约0.01至约20重量％的过氧化氢或约1至约30ppm的臭氧的成员，包括：a）在混合罐中混合水，硫酸和过氧化氢; b）将HF直接混入混合罐或将HF加入单独的容器中用于晶片处理，或者在混合物水之前，之中或之后，将硫酸和过氧化氢混合物输送到单独的罐中进行晶片处理; c）从混合罐中取出包含HR的样品或从晶片处理罐取出HF，并通过反馈回路发送样品; d）将样品包含在HF的标准稀释溶液中以获得样品中HF浓度的值; e）将该值输入到罐工具配方控制中，以在混合罐或晶圆处理容器中引起HF浓度到预定范围的任何需要的调整; 以及f）在除去侧壁聚合物，聚合物轨道和通孔残留物期间，不蚀刻导电材料，通过蚀刻剂组合物对半导体器件的布线/互连进行蚀刻以去除侧壁聚合物，聚合物轨道和通孔残余物。